Work function modification of tungsten-doped indium oxides deposited by the co-sputtering method

Gyujin Oh, Jia Jeon, Kyoung Su Lee, Eun Kyu Kim

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We have studied the work function modification of tungsten-doped indium oxides (IWOs) through the co-sputtering of indium oxide (In2O3) and indium tungsten oxide (In2O3 80 wt%+WO320 wt%) via a radio frequency (RF) magnetron sputtering system. By controlling the elemental deposition of IWOs, the resultant work functions varied from 4.37 eV to 4.1 eV. The IWO thin films showed excellent properties for application as transparent conducting oxide materials in the region of 0 to 2.43 at.% of tungsten versus the total metal content. The carrier concentration of n-type IWO thin films varied from 8.39 × 1019 cm-3 to 8.58 × 1021 cm-3, while the resistivity varied from 3.15 × 10-4 Ωcm to 2.26 × 10-3 Ωcm. The largest measured optical band gap was 3.82 eV determined at 2.43 at.% of tungsten atoms relative to the total amount of metal atoms, while the smallest optical band gap was 3.6 eV at 4.78 at.% of tungsten. IWO films containing more than 2.43 at.% of tungsten atoms relative to the total number of metal atoms revealed an average transmittance of over 80% within the visible light region.

Original languageEnglish
Pages (from-to)5109-5113
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number5
DOIs
StatePublished - 2016 May

Keywords

  • Indium tungsten oxide
  • Magnetron co-sputtering
  • Transparent conducting oxide
  • Work function modification

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