White light-emitting diodes with phase-separated InGaN active layers

Yong Tae Moon, Dong Joon Kim, Jinsub Park, Jeong Tak Oh, Nae Man Park, Tae Soo Kim, Seong Ju Park

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

White light-emitting diodes (LED) were fabricated using phase-separated InGaN active layers without phosphor materials. The InGaN films were grown on GaN in a netalorganic chemical vapor deposition system. Photoluminescence measurements were carried out using a He-Cd laser. Multiple quantum wells were examined by transmission electron microscope (TEM). Results showed that white luminescence was due to broad distributions of indium composition and size of quantum dot-like In-rich regions in the phase separated InGaN ternary alloys.

Original languageEnglish
Pages (from-to)93-98
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4445
DOIs
StatePublished - 2001 Dec 1
EventSolid State Lighting and Displays - San Diego, CA, United States
Duration: 2001 Jul 312001 Aug 1

Fingerprint

InGaN
Indium
Ternary alloys
ternary alloys
Diode
Phosphors
Semiconductor quantum wells
Semiconductor quantum dots
phosphors
Light emitting diodes
indium
Luminescence
Chemical vapor deposition
Photoluminescence
Electron microscopes
light emitting diodes
electron microscopes
quantum dots
quantum wells
vapor deposition

Keywords

  • InGaN
  • Luminescence
  • Phase separation
  • White LED
  • White light

Cite this

Moon, Yong Tae ; Kim, Dong Joon ; Park, Jinsub ; Oh, Jeong Tak ; Park, Nae Man ; Kim, Tae Soo ; Park, Seong Ju. / White light-emitting diodes with phase-separated InGaN active layers. In: Proceedings of SPIE - The International Society for Optical Engineering. 2001 ; Vol. 4445. pp. 93-98.
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White light-emitting diodes with phase-separated InGaN active layers. / Moon, Yong Tae; Kim, Dong Joon; Park, Jinsub; Oh, Jeong Tak; Park, Nae Man; Kim, Tae Soo; Park, Seong Ju.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4445, 01.12.2001, p. 93-98.

Research output: Contribution to journalConference article

TY - JOUR

T1 - White light-emitting diodes with phase-separated InGaN active layers

AU - Moon, Yong Tae

AU - Kim, Dong Joon

AU - Park, Jinsub

AU - Oh, Jeong Tak

AU - Park, Nae Man

AU - Kim, Tae Soo

AU - Park, Seong Ju

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KW - Luminescence

KW - Phase separation

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KW - White light

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