V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes

T. G. Kim, Eun Kyu Kim, S. K. Min, J. H. Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new GaAs/AlGaAs quantum wire laser array (QWLA) confined by p-n junction-isolation stripes is reported. The QWLA is fabricated with 1.5 μm wide stripe-channels through the quantum wire (QWR) active regions using two-step MOCVD growth with a wet etching technique. Prior to the device fabrication, active channel- and leakage-current are calculated using a d.c. equivalent circuit to quantitatively estimate the current-confinement effect. QWLA consisting of 10 QWRs has currently demonstrated a maximum output power as high as 18.2 mW at 385 mA and a threshold current density as low as 0.23 kA m-2 facet-1 under room temperature pulsed operation.

Original languageEnglish
Pages (from-to)1079-1081
Number of pages3
JournalSolid-State Electronics
Volume41
Issue number8
DOIs
StatePublished - 1997 Jan 1

Fingerprint

Semiconductor quantum wires
laser arrays
quantum wires
aluminum gallium arsenides
isolation
Lasers
Threshold current density
Wet etching
Metallorganic chemical vapor deposition
p-n junctions
threshold currents
equivalent circuits
Leakage currents
Equivalent circuits
metalorganic chemical vapor deposition
flat surfaces
leakage
etching
current density
Fabrication

Cite this

Kim, T. G. ; Kim, Eun Kyu ; Min, S. K. ; Park, J. H. / V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes. In: Solid-State Electronics. 1997 ; Vol. 41, No. 8. pp. 1079-1081.
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V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes. / Kim, T. G.; Kim, Eun Kyu; Min, S. K.; Park, J. H.

In: Solid-State Electronics, Vol. 41, No. 8, 01.01.1997, p. 1079-1081.

Research output: Contribution to journalArticle

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