Upright-standing SnO 2 nanowalls: Fabrication, dual-photosensitization and photovoltaic properties

Dipak V. Shinde, Iseul Lim, Chang Sam Kim, Joong Kee Lee, Rajaram S. Mane, Sung-Hwan Han

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report on fabrication of upright-standing SnO 2 nanowalls aligned on FTO substrates by a facile wet chemical method at low temperature. These nanowalls are dual-photosensitized with CdS quantum dots and Z907 dye molecules in order to construct panchromatic dye-sensitized solar cells. We demonstrate that thin CdS quantum dot layer not only acts as a blocking layer preventing recombination of charge carriers, but also contributes as a light absorber. A 158% improvement in power conversion efficiency is observed, which is attributed to improved light absorption, reduced recombination and improved charge collection in presence of CdS quantum dot interlayer.

Original languageEnglish
Pages (from-to)66-69
Number of pages4
JournalChemical Physics Letters
Volume542
DOIs
StatePublished - 2012 Jul 23

Fingerprint

Semiconductor quantum dots
quantum dots
Fabrication
fabrication
dyes
electromagnetic absorption
Charge carriers
Light absorption
Conversion efficiency
charge carriers
interlayers
absorbers
Coloring Agents
solar cells
Molecules
Substrates
molecules
Temperature
Dye-sensitized solar cells

Cite this

Shinde, Dipak V. ; Lim, Iseul ; Kim, Chang Sam ; Lee, Joong Kee ; Mane, Rajaram S. ; Han, Sung-Hwan. / Upright-standing SnO 2 nanowalls : Fabrication, dual-photosensitization and photovoltaic properties. In: Chemical Physics Letters. 2012 ; Vol. 542. pp. 66-69.
@article{6ac8cca2b42e4c739e9d39ed7d197013,
title = "Upright-standing SnO 2 nanowalls: Fabrication, dual-photosensitization and photovoltaic properties",
abstract = "We report on fabrication of upright-standing SnO 2 nanowalls aligned on FTO substrates by a facile wet chemical method at low temperature. These nanowalls are dual-photosensitized with CdS quantum dots and Z907 dye molecules in order to construct panchromatic dye-sensitized solar cells. We demonstrate that thin CdS quantum dot layer not only acts as a blocking layer preventing recombination of charge carriers, but also contributes as a light absorber. A 158{\%} improvement in power conversion efficiency is observed, which is attributed to improved light absorption, reduced recombination and improved charge collection in presence of CdS quantum dot interlayer.",
author = "Shinde, {Dipak V.} and Iseul Lim and Kim, {Chang Sam} and Lee, {Joong Kee} and Mane, {Rajaram S.} and Sung-Hwan Han",
year = "2012",
month = "7",
day = "23",
doi = "10.1016/j.cplett.2012.05.061",
language = "English",
volume = "542",
pages = "66--69",
journal = "Chemical Physics Letters",
issn = "0009-2614",

}

Upright-standing SnO 2 nanowalls : Fabrication, dual-photosensitization and photovoltaic properties. / Shinde, Dipak V.; Lim, Iseul; Kim, Chang Sam; Lee, Joong Kee; Mane, Rajaram S.; Han, Sung-Hwan.

In: Chemical Physics Letters, Vol. 542, 23.07.2012, p. 66-69.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Upright-standing SnO 2 nanowalls

T2 - Fabrication, dual-photosensitization and photovoltaic properties

AU - Shinde, Dipak V.

AU - Lim, Iseul

AU - Kim, Chang Sam

AU - Lee, Joong Kee

AU - Mane, Rajaram S.

AU - Han, Sung-Hwan

PY - 2012/7/23

Y1 - 2012/7/23

N2 - We report on fabrication of upright-standing SnO 2 nanowalls aligned on FTO substrates by a facile wet chemical method at low temperature. These nanowalls are dual-photosensitized with CdS quantum dots and Z907 dye molecules in order to construct panchromatic dye-sensitized solar cells. We demonstrate that thin CdS quantum dot layer not only acts as a blocking layer preventing recombination of charge carriers, but also contributes as a light absorber. A 158% improvement in power conversion efficiency is observed, which is attributed to improved light absorption, reduced recombination and improved charge collection in presence of CdS quantum dot interlayer.

AB - We report on fabrication of upright-standing SnO 2 nanowalls aligned on FTO substrates by a facile wet chemical method at low temperature. These nanowalls are dual-photosensitized with CdS quantum dots and Z907 dye molecules in order to construct panchromatic dye-sensitized solar cells. We demonstrate that thin CdS quantum dot layer not only acts as a blocking layer preventing recombination of charge carriers, but also contributes as a light absorber. A 158% improvement in power conversion efficiency is observed, which is attributed to improved light absorption, reduced recombination and improved charge collection in presence of CdS quantum dot interlayer.

UR - http://www.scopus.com/inward/record.url?scp=84863718435&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2012.05.061

DO - 10.1016/j.cplett.2012.05.061

M3 - Article

AN - SCOPUS:84863718435

VL - 542

SP - 66

EP - 69

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

ER -