Ultrashallow junction formation using novel plasma doping technology beyond 50 nm MOS devices

Kiju Im, Won Ju Cho, Chang Geun Ahn, Jong Heon Yang, In Bok Baek, Seongjae Lee, Sungkweon Baek, Hyunsang Hwang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, we demonstrate a novel plasma ion-shower doping (PLAD) technique for fabricating a nanoscale silicon-on-insulator metal-oxide- semiconductor field effect transistors (SOI MOSFETs). The source drain (S/D) extensions of the SOI n-MOSFETs were formed by elevated-temperature (ET) PLAD. Even though activation annealing after PLAD was excluded to minimize the diffusion of dopants, which resulted in laterally abrupt S/D junction, we obtained a low sheet resistance of 920 Ω/□ by the ET PLAD at 230°C. The fabricated SOI n-MOSFET with a gate length of 50 nm adopted in the proposed junction formation technique showed suppressed short-channel effects. The successful operation of a MOSFET with a high-κ gate dielectric and metal gate revealed that the proposed junction formation technique is compatible with devices made of low-thermal-budget material.

Original languageEnglish
Pages (from-to)2376-2379
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
StatePublished - 2005 Apr 1

Fingerprint

MOS devices
field effect transistors
Doping (additives)
Plasmas
Gate dielectrics
Sheet resistance
SOI (semiconductors)
MOSFET devices
Chemical activation
Annealing
Silicon
Temperature
Ions
showers
Metals
metal oxide semiconductors
budgets
insulators
activation
annealing

Keywords

  • CMOS
  • High-κ gate dielectric
  • MOSFET
  • Plasma ion-shower doping
  • SOI

Cite this

Im, Kiju ; Cho, Won Ju ; Ahn, Chang Geun ; Yang, Jong Heon ; Baek, In Bok ; Lee, Seongjae ; Baek, Sungkweon ; Hwang, Hyunsang. / Ultrashallow junction formation using novel plasma doping technology beyond 50 nm MOS devices. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2005 ; Vol. 44, No. 4 B. pp. 2376-2379.
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Ultrashallow junction formation using novel plasma doping technology beyond 50 nm MOS devices. / Im, Kiju; Cho, Won Ju; Ahn, Chang Geun; Yang, Jong Heon; Baek, In Bok; Lee, Seongjae; Baek, Sungkweon; Hwang, Hyunsang.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, 01.04.2005, p. 2376-2379.

Research output: Contribution to journalArticle

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AU - Im, Kiju

AU - Cho, Won Ju

AU - Ahn, Chang Geun

AU - Yang, Jong Heon

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AU - Lee, Seongjae

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