Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition

Yong Kim, Kyung Hwa Park, Tae Hun Chung, Hong Jun Bark, Jae Yel Yi, Won Chel Choi, Eun Kyu Kim, Ju Wook Lee, Jeong Yong Lee

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

Amorphous silicon films are deposited by ion-beam-assisted electron beam deposition and subsequently oxidized by a rapid thermal oxidation process. The oxidized film contains a large density of nanocrystals specifically localized at a certain depth from the Si/SiOx interface, whereas no evidence of nanocrystals is found for oxidized films deposited without ion beam assistance. Such a marked contrast resulted from the enhancement of nucleation rate by ion beam irradiation. The metal-oxide-semiconductor structure utilizing the film shows an ultralarge capacitance-voltage hysteresis whose width is over 20 V. In addition capacitance-time measurement shows a characteristic capacitance transient indicating nondispersive carrier relaxation. The retention time shows a dependence on applied bias and the maximum time of ∼70 s is obtained near midgap voltage. The retention time dependence on applied bias and large capacitance-voltage hysteresis are attributed to direct tunneling of trapped charges in the deep traps of nanocrystals to the interface states.

Original languageEnglish
Pages (from-to)934-936
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number7
DOIs
StatePublished - 2001 Feb 12

Fingerprint

metal oxide semiconductors
nanocrystals
capacitance
ion beams
hysteresis
electron beams
electric potential
silicon films
time dependence
amorphous silicon
time measurement
traps
nucleation
oxidation
irradiation
augmentation

Cite this

Kim, Yong ; Park, Kyung Hwa ; Chung, Tae Hun ; Bark, Hong Jun ; Yi, Jae Yel ; Choi, Won Chel ; Kim, Eun Kyu ; Lee, Ju Wook ; Lee, Jeong Yong. / Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition. In: Applied Physics Letters. 2001 ; Vol. 78, No. 7. pp. 934-936.
@article{e725431824374754a7866d7a8c016311,
title = "Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition",
abstract = "Amorphous silicon films are deposited by ion-beam-assisted electron beam deposition and subsequently oxidized by a rapid thermal oxidation process. The oxidized film contains a large density of nanocrystals specifically localized at a certain depth from the Si/SiOx interface, whereas no evidence of nanocrystals is found for oxidized films deposited without ion beam assistance. Such a marked contrast resulted from the enhancement of nucleation rate by ion beam irradiation. The metal-oxide-semiconductor structure utilizing the film shows an ultralarge capacitance-voltage hysteresis whose width is over 20 V. In addition capacitance-time measurement shows a characteristic capacitance transient indicating nondispersive carrier relaxation. The retention time shows a dependence on applied bias and the maximum time of ∼70 s is obtained near midgap voltage. The retention time dependence on applied bias and large capacitance-voltage hysteresis are attributed to direct tunneling of trapped charges in the deep traps of nanocrystals to the interface states.",
author = "Yong Kim and Park, {Kyung Hwa} and Chung, {Tae Hun} and Bark, {Hong Jun} and Yi, {Jae Yel} and Choi, {Won Chel} and Kim, {Eun Kyu} and Lee, {Ju Wook} and Lee, {Jeong Yong}",
year = "2001",
month = "2",
day = "12",
doi = "10.1063/1.1337618",
language = "English",
volume = "78",
pages = "934--936",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "7",

}

Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition. / Kim, Yong; Park, Kyung Hwa; Chung, Tae Hun; Bark, Hong Jun; Yi, Jae Yel; Choi, Won Chel; Kim, Eun Kyu; Lee, Ju Wook; Lee, Jeong Yong.

In: Applied Physics Letters, Vol. 78, No. 7, 12.02.2001, p. 934-936.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition

AU - Kim, Yong

AU - Park, Kyung Hwa

AU - Chung, Tae Hun

AU - Bark, Hong Jun

AU - Yi, Jae Yel

AU - Choi, Won Chel

AU - Kim, Eun Kyu

AU - Lee, Ju Wook

AU - Lee, Jeong Yong

PY - 2001/2/12

Y1 - 2001/2/12

N2 - Amorphous silicon films are deposited by ion-beam-assisted electron beam deposition and subsequently oxidized by a rapid thermal oxidation process. The oxidized film contains a large density of nanocrystals specifically localized at a certain depth from the Si/SiOx interface, whereas no evidence of nanocrystals is found for oxidized films deposited without ion beam assistance. Such a marked contrast resulted from the enhancement of nucleation rate by ion beam irradiation. The metal-oxide-semiconductor structure utilizing the film shows an ultralarge capacitance-voltage hysteresis whose width is over 20 V. In addition capacitance-time measurement shows a characteristic capacitance transient indicating nondispersive carrier relaxation. The retention time shows a dependence on applied bias and the maximum time of ∼70 s is obtained near midgap voltage. The retention time dependence on applied bias and large capacitance-voltage hysteresis are attributed to direct tunneling of trapped charges in the deep traps of nanocrystals to the interface states.

AB - Amorphous silicon films are deposited by ion-beam-assisted electron beam deposition and subsequently oxidized by a rapid thermal oxidation process. The oxidized film contains a large density of nanocrystals specifically localized at a certain depth from the Si/SiOx interface, whereas no evidence of nanocrystals is found for oxidized films deposited without ion beam assistance. Such a marked contrast resulted from the enhancement of nucleation rate by ion beam irradiation. The metal-oxide-semiconductor structure utilizing the film shows an ultralarge capacitance-voltage hysteresis whose width is over 20 V. In addition capacitance-time measurement shows a characteristic capacitance transient indicating nondispersive carrier relaxation. The retention time shows a dependence on applied bias and the maximum time of ∼70 s is obtained near midgap voltage. The retention time dependence on applied bias and large capacitance-voltage hysteresis are attributed to direct tunneling of trapped charges in the deep traps of nanocrystals to the interface states.

UR - http://www.scopus.com/inward/record.url?scp=0000020095&partnerID=8YFLogxK

U2 - 10.1063/1.1337618

DO - 10.1063/1.1337618

M3 - Article

AN - SCOPUS:0000020095

VL - 78

SP - 934

EP - 936

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -