Transparent thin film transistors based on parallel array of si nanowires

Dong Hyun Lee, Jae Woong Choung, Yong Bum Pyun, Kwangsoo Son, Won Il Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We report on the fabrication of fully transparent thin-film transistors (T-TFTs) by implementing the aligned silicon nanowires (SiNWs) and Ga-doped ZnO thin films as transparent channels and transparent conducting electrodes, respectively. The SiNWs aligned on the glass substrates are highly transparent in the visible spectral range, with a transmittance of ∼90 % for the NW density of ∼2-3 μm-1. In addition, polarization-dependent measurements reveal the variation of transmittance in the range of 75-95 % with respect to the angle between polarization of incident light and the NW axis. Gate dependent transport measurements demonstrated that the boron-doped SiNW devices behaved as p-type TFTs with good characteristics in terms of transconductance and switching behavior.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1282-1283
Number of pages2
DOIs
StatePublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/01/310/01/8

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    Lee, D. H., Choung, J. W., Pyun, Y. B., Son, K., & Park, W. I. (2010). Transparent thin film transistors based on parallel array of si nanowires. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1282-1283). [5424905] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424905