Abstract
Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm%1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2% valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106Ω&cm as the film thickness increased.
| Original language | English |
|---|---|
| Article number | 031201 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 56 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2017 Mar 1 |
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Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition. / Seo, Wondeok; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Lee, Seungjin; Choi, Hyeongsu; Jeon, Hyeongtag.
In: Japanese Journal of Applied Physics, Vol. 56, No. 3, 031201, 01.03.2017.Research output: Contribution to journal › Article
TY - JOUR
T1 - Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition
AU - Seo, Wondeok
AU - Shin, Seokyoon
AU - Ham, Giyul
AU - Lee, Juhyun
AU - Lee, Seungjin
AU - Choi, Hyeongsu
AU - Jeon, Hyeongtag
PY - 2017/3/1
Y1 - 2017/3/1
N2 - Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm%1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2% valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106Ω&cm as the film thickness increased.
AB - Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm%1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2% valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106Ω&cm as the film thickness increased.
UR - http://www.scopus.com/inward/record.url?scp=85014416191&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.031201
DO - 10.7567/JJAP.56.031201
M3 - Article
AN - SCOPUS:85014416191
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
SN - 0021-4922
IS - 3
M1 - 031201
ER -