Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition

Wondeok Seo, Seokyoon Shin, Giyul Ham, Juhyun Lee, Seungjin Lee, Hyeongsu Choi, Hyeongtag Jeon

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm%1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2% valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106Ω&cm as the film thickness increased.

Original languageEnglish
Article number031201
JournalJapanese Journal of Applied Physics
Volume56
Issue number3
DOIs
StatePublished - 2017 Mar 1

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Atomic layer deposition
atomic layer epitaxy
Film thickness
film thickness
Thin films
thin films
transmittance
Optical band gaps
disulfides
Tin
Raman scattering
crystallinity
tin
Energy gap
x rays
Electron microscopes
X ray photoelectron spectroscopy
electron microscopes
photoelectron spectroscopy
Raman spectra

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Seo, Wondeok ; Shin, Seokyoon ; Ham, Giyul ; Lee, Juhyun ; Lee, Seungjin ; Choi, Hyeongsu ; Jeon, Hyeongtag. / Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition. In: Japanese Journal of Applied Physics. 2017 ; Vol. 56, No. 3.
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abstract = "Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm{\%}1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2{\%} valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32{\%} at a wavelength of 400nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106Ω&cm as the film thickness increased.",
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Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition. / Seo, Wondeok; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Lee, Seungjin; Choi, Hyeongsu; Jeon, Hyeongtag.

In: Japanese Journal of Applied Physics, Vol. 56, No. 3, 031201, 01.03.2017.

Research output: Contribution to journalArticle

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AU - Ham, Giyul

AU - Lee, Juhyun

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AU - Choi, Hyeongsu

AU - Jeon, Hyeongtag

PY - 2017/3/1

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N2 - Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm%1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2% valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106Ω&cm as the film thickness increased.

AB - Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm%1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2% valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106Ω&cm as the film thickness increased.

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