Thermally evaporated SiO thin films as a versatile interlayer for plasma-based OLED passivation

Won Min Yun, Jaeyoung Jang, Sooji Nam, Lae Ho Kim, Sang Joon Seo, Chan Eon Park

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Silicon monoxide (SiO) thin films were introduced as an efficient interlayer for achieving plasma-based organic light-emitting diode (OLED) surface passivation. The SiO thin films could be consecutively formed via thermal evaporation, without breaking the vacuum, after deposition of the OLED cathode. The plasma resistivity and UV-blocking characteristics of the SiO interlayer protected the OLED devices against electrical and optical degradation during the plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) passivation processes. In addition, the nonconformal deposition and hydroxyl group-rich surface characteristics of the SiO thin films yielded enhanced surface pinhole coverage and a higher initial film density in the subsequently deposited PEALD-based Al 2O 3 barrier film. As a result, the OLEDs with a SiO/Al 2O 3 bilayer passivation layer displayed a remarkably increased device shelf life compared to devices prepared using Al 2O 3-only passivation. A MOCON test showed that the water vapor transmission rate (WVTR) of the SiO/Al 2O 3 bilayer film was 0.0033 g/(m 2 day), 2.3 times lower than the rate of a single Al 2O 3 barrier film. The results of our study demonstrated the multipurpose role of a SiO interlayer in plasma-based OLED passivation. The layer acted as a damage-free protective layer for the underlying OLED devices and an assistant layer to improve the upper barrier film performance.

Original languageEnglish
Pages (from-to)3247-3253
Number of pages7
JournalACS Applied Materials and Interfaces
Volume4
Issue number6
DOIs
StatePublished - 2012 Jun 27

Fingerprint

Organic light emitting diodes (OLED)
Passivation
Plasmas
Thin films
Silicon
Atomic layer deposition
Thermal evaporation
Steam
Plasma enhanced chemical vapor deposition
silicon monoxide
Hydroxyl Radical
Water vapor
Cathodes
Vacuum
Degradation

Keywords

  • barrier property enhancement
  • organic light emitting diodes (OLEDs)
  • passivation
  • protective interlayer
  • silicon monoxide (SiO)
  • thin film encapsulation

Cite this

Yun, Won Min ; Jang, Jaeyoung ; Nam, Sooji ; Kim, Lae Ho ; Seo, Sang Joon ; Park, Chan Eon. / Thermally evaporated SiO thin films as a versatile interlayer for plasma-based OLED passivation. In: ACS Applied Materials and Interfaces. 2012 ; Vol. 4, No. 6. pp. 3247-3253.
@article{7cd2bb06ade34fe6a73339ca0aab7501,
title = "Thermally evaporated SiO thin films as a versatile interlayer for plasma-based OLED passivation",
abstract = "Silicon monoxide (SiO) thin films were introduced as an efficient interlayer for achieving plasma-based organic light-emitting diode (OLED) surface passivation. The SiO thin films could be consecutively formed via thermal evaporation, without breaking the vacuum, after deposition of the OLED cathode. The plasma resistivity and UV-blocking characteristics of the SiO interlayer protected the OLED devices against electrical and optical degradation during the plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) passivation processes. In addition, the nonconformal deposition and hydroxyl group-rich surface characteristics of the SiO thin films yielded enhanced surface pinhole coverage and a higher initial film density in the subsequently deposited PEALD-based Al 2O 3 barrier film. As a result, the OLEDs with a SiO/Al 2O 3 bilayer passivation layer displayed a remarkably increased device shelf life compared to devices prepared using Al 2O 3-only passivation. A MOCON test showed that the water vapor transmission rate (WVTR) of the SiO/Al 2O 3 bilayer film was 0.0033 g/(m 2 day), 2.3 times lower than the rate of a single Al 2O 3 barrier film. The results of our study demonstrated the multipurpose role of a SiO interlayer in plasma-based OLED passivation. The layer acted as a damage-free protective layer for the underlying OLED devices and an assistant layer to improve the upper barrier film performance.",
keywords = "barrier property enhancement, organic light emitting diodes (OLEDs), passivation, protective interlayer, silicon monoxide (SiO), thin film encapsulation",
author = "Yun, {Won Min} and Jaeyoung Jang and Sooji Nam and Kim, {Lae Ho} and Seo, {Sang Joon} and Park, {Chan Eon}",
year = "2012",
month = "6",
day = "27",
doi = "10.1021/am300600s",
language = "English",
volume = "4",
pages = "3247--3253",
journal = "ACS Applied Materials and Interfaces",
issn = "1944-8244",
number = "6",

}

Thermally evaporated SiO thin films as a versatile interlayer for plasma-based OLED passivation. / Yun, Won Min; Jang, Jaeyoung; Nam, Sooji; Kim, Lae Ho; Seo, Sang Joon; Park, Chan Eon.

In: ACS Applied Materials and Interfaces, Vol. 4, No. 6, 27.06.2012, p. 3247-3253.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermally evaporated SiO thin films as a versatile interlayer for plasma-based OLED passivation

AU - Yun, Won Min

AU - Jang, Jaeyoung

AU - Nam, Sooji

AU - Kim, Lae Ho

AU - Seo, Sang Joon

AU - Park, Chan Eon

PY - 2012/6/27

Y1 - 2012/6/27

N2 - Silicon monoxide (SiO) thin films were introduced as an efficient interlayer for achieving plasma-based organic light-emitting diode (OLED) surface passivation. The SiO thin films could be consecutively formed via thermal evaporation, without breaking the vacuum, after deposition of the OLED cathode. The plasma resistivity and UV-blocking characteristics of the SiO interlayer protected the OLED devices against electrical and optical degradation during the plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) passivation processes. In addition, the nonconformal deposition and hydroxyl group-rich surface characteristics of the SiO thin films yielded enhanced surface pinhole coverage and a higher initial film density in the subsequently deposited PEALD-based Al 2O 3 barrier film. As a result, the OLEDs with a SiO/Al 2O 3 bilayer passivation layer displayed a remarkably increased device shelf life compared to devices prepared using Al 2O 3-only passivation. A MOCON test showed that the water vapor transmission rate (WVTR) of the SiO/Al 2O 3 bilayer film was 0.0033 g/(m 2 day), 2.3 times lower than the rate of a single Al 2O 3 barrier film. The results of our study demonstrated the multipurpose role of a SiO interlayer in plasma-based OLED passivation. The layer acted as a damage-free protective layer for the underlying OLED devices and an assistant layer to improve the upper barrier film performance.

AB - Silicon monoxide (SiO) thin films were introduced as an efficient interlayer for achieving plasma-based organic light-emitting diode (OLED) surface passivation. The SiO thin films could be consecutively formed via thermal evaporation, without breaking the vacuum, after deposition of the OLED cathode. The plasma resistivity and UV-blocking characteristics of the SiO interlayer protected the OLED devices against electrical and optical degradation during the plasma-enhanced atomic layer deposition (PEALD) and plasma-enhanced chemical vapor deposition (PECVD) passivation processes. In addition, the nonconformal deposition and hydroxyl group-rich surface characteristics of the SiO thin films yielded enhanced surface pinhole coverage and a higher initial film density in the subsequently deposited PEALD-based Al 2O 3 barrier film. As a result, the OLEDs with a SiO/Al 2O 3 bilayer passivation layer displayed a remarkably increased device shelf life compared to devices prepared using Al 2O 3-only passivation. A MOCON test showed that the water vapor transmission rate (WVTR) of the SiO/Al 2O 3 bilayer film was 0.0033 g/(m 2 day), 2.3 times lower than the rate of a single Al 2O 3 barrier film. The results of our study demonstrated the multipurpose role of a SiO interlayer in plasma-based OLED passivation. The layer acted as a damage-free protective layer for the underlying OLED devices and an assistant layer to improve the upper barrier film performance.

KW - barrier property enhancement

KW - organic light emitting diodes (OLEDs)

KW - passivation

KW - protective interlayer

KW - silicon monoxide (SiO)

KW - thin film encapsulation

UR - http://www.scopus.com/inward/record.url?scp=84863201518&partnerID=8YFLogxK

U2 - 10.1021/am300600s

DO - 10.1021/am300600s

M3 - Article

AN - SCOPUS:84863201518

VL - 4

SP - 3247

EP - 3253

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

SN - 1944-8244

IS - 6

ER -