Thermal stability study of Eu2+-doped BaAl2Si 2O8 phosphor using polymorphism for plasma display panel applications

Won Bin Im, Yong Il Kim, Duk Young Jeon

Research output: Contribution to journalConference article

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Abstract

We have evaluated thermal stability of a BaAl2Si 2O8:Eu2+ (BAS:Eu2+), which have polymorph property such as hexagonal, monoclinic structure depending upon firing temperature. When both polymorph BAS:Eu2+ were baked in air at 500 °C for 30 min, the photoluminescence (PL) intensity of monoclinicBAS:Eu 2+ was maintained of the initial intensity. However, the PL intensity of hexagonalBAS:Eu2+ decreased significantly, corresponding to about 34%. From analyses of Rietveld refinement, the difference of thermal stability of both BAS:Eu2+ can be ascribed to both crystal structure of host materials and the average inter-atomic distances between Eu2+ ion and oxygen their crystal structure which plays a key role of shield for Eu 2+ ions against oxidation atmosphere.

Original languageEnglish
Pages (from-to)1568-1571
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2
StatePublished - 2006 Dec 1
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

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