Thermal stability of the exchanged biased CoFe/IrMn electrode for the magnetic tunnel junction as a function of CoFe thickness

J. H. Lee, S. J. Kim, Chong Seung Yoon, Chang Kyung Kim, B. G. Park, T. D. Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Pinned electrodes of the magnetic tunnel junction (MTJ) consisting of Ta/AlO x/CoFe(x)/IrMn/NiFe/Ta, where 35Å<x<87.5Å, were thermally annealed and analyzed using Auger electron spectroscopy and transmission electron microscopy in order to study the effects of the CoFe thickness on the interdiffusion of elements in the pinned electrode. Increasing CoFe thickness reduced the Mn migration out of the IrMn layer towards the tunnel barrier. An 87.5-Å-thick CoFe layer completely blocked the Mn diffusion up to 350 °C with minimal reduction of the tunneling magnetoresistance (TMR) ratio when full junction was fabricated. Although other mechanisms could be responsible for the thermal degradation of the MTJ, the Mn diffusion appears to be related to the reduction of the TMR at 300 °C. Since the presence of Mn in the tunnel barrier as an impurity is detrimental to the junction performance, reduction of Mn migration towards the tunnel barrier by increasing the CoFe electrode should improve the postannealed performance of the junction.

Original languageEnglish
Pages (from-to)6241-6244
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number10
DOIs
StatePublished - 2002 Nov 15

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tunnel junctions
tunnels
thermal stability
electrodes
thermal degradation
Auger spectroscopy
electron spectroscopy
impurities
transmission electron microscopy

Cite this

@article{57019f39ff0140c69b8899c5ad1698f4,
title = "Thermal stability of the exchanged biased CoFe/IrMn electrode for the magnetic tunnel junction as a function of CoFe thickness",
abstract = "Pinned electrodes of the magnetic tunnel junction (MTJ) consisting of Ta/AlO x/CoFe(x)/IrMn/NiFe/Ta, where 35{\AA}",
author = "Lee, {J. H.} and Kim, {S. J.} and Yoon, {Chong Seung} and Kim, {Chang Kyung} and Park, {B. G.} and Lee, {T. D.}",
year = "2002",
month = "11",
day = "15",
doi = "10.1063/1.1516623",
language = "English",
volume = "92",
pages = "6241--6244",
journal = "Journal of Applied Physics",
issn = "0021-8979",
number = "10",

}

Thermal stability of the exchanged biased CoFe/IrMn electrode for the magnetic tunnel junction as a function of CoFe thickness. / Lee, J. H.; Kim, S. J.; Yoon, Chong Seung; Kim, Chang Kyung; Park, B. G.; Lee, T. D.

In: Journal of Applied Physics, Vol. 92, No. 10, 15.11.2002, p. 6241-6244.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal stability of the exchanged biased CoFe/IrMn electrode for the magnetic tunnel junction as a function of CoFe thickness

AU - Lee, J. H.

AU - Kim, S. J.

AU - Yoon, Chong Seung

AU - Kim, Chang Kyung

AU - Park, B. G.

AU - Lee, T. D.

PY - 2002/11/15

Y1 - 2002/11/15

N2 - Pinned electrodes of the magnetic tunnel junction (MTJ) consisting of Ta/AlO x/CoFe(x)/IrMn/NiFe/Ta, where 35Å

AB - Pinned electrodes of the magnetic tunnel junction (MTJ) consisting of Ta/AlO x/CoFe(x)/IrMn/NiFe/Ta, where 35Å

UR - http://www.scopus.com/inward/record.url?scp=0037112981&partnerID=8YFLogxK

U2 - 10.1063/1.1516623

DO - 10.1063/1.1516623

M3 - Article

AN - SCOPUS:0037112981

VL - 92

SP - 6241

EP - 6244

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

ER -