Thermal stability of metal-silicide nanocrystal nonvolatile memory with barrier engineered tunnel layers

Dong Uk Lee, Seon Pil Kim, Dong Seok Han, Hyo Jun Lee, Eun Kyu Kim, Hee Wook You, Won Ju Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

WSi 2 nanocrystal nonvolatile memory devices were fabricated with a silicon oxide-nitride-oxide (SiO 2: 2 nm/Si 3N 4:2 nm/SiO 2: 3 nm) tunnel layer. WSi 2 nanocrystals of 2.5 nm diameters and a density of 3.6×10 12 cm -2 were formed using radio frequency magnetron sputtering and annealing processes. The WSi 2 nanocrystal nonvolatile memory device exhibited strong thermal stability during writing/erasing operations at temperatures up to 125 °C. When the writing/erasing voltages were applied at +10 V/-10 V for 500 ms, the memory window of the initial ∼2.6 V decreased by approximately 1.1 V at 25 °C and 0.4 V at 125 °C after 10 4 sec, respectively. These results show that WSi2 nanocrystals with barrier-engineered tunnel layers are possible for application in nonvolatile memory devices.

Original languageEnglish
Pages (from-to)9181-9184
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number10
DOIs
StatePublished - 2011 Dec 1

Fingerprint

Nanocrystals
tunnels
Tunnels
nanocrystals
Thermodynamic stability
thermal stability
Metals
Data storage equipment
metals
Silicon oxides
silicon oxides
Nitrides
Magnetron sputtering
Oxides
nitrides
radio frequencies
magnetron sputtering
Annealing
annealing
oxides

Keywords

  • Nano-Floating Gate Memory
  • Nanocrystals
  • Nonvolatile Memory
  • Tunnel Layer
  • WSi

Cite this

Lee, Dong Uk ; Kim, Seon Pil ; Han, Dong Seok ; Lee, Hyo Jun ; Kim, Eun Kyu ; You, Hee Wook ; Cho, Won Ju. / Thermal stability of metal-silicide nanocrystal nonvolatile memory with barrier engineered tunnel layers. In: Journal of Nanoscience and Nanotechnology. 2011 ; Vol. 11, No. 10. pp. 9181-9184.
@article{c7537e1f990746429c398ecf844f1c8a,
title = "Thermal stability of metal-silicide nanocrystal nonvolatile memory with barrier engineered tunnel layers",
abstract = "WSi 2 nanocrystal nonvolatile memory devices were fabricated with a silicon oxide-nitride-oxide (SiO 2: 2 nm/Si 3N 4:2 nm/SiO 2: 3 nm) tunnel layer. WSi 2 nanocrystals of 2.5 nm diameters and a density of 3.6×10 12 cm -2 were formed using radio frequency magnetron sputtering and annealing processes. The WSi 2 nanocrystal nonvolatile memory device exhibited strong thermal stability during writing/erasing operations at temperatures up to 125 °C. When the writing/erasing voltages were applied at +10 V/-10 V for 500 ms, the memory window of the initial ∼2.6 V decreased by approximately 1.1 V at 25 °C and 0.4 V at 125 °C after 10 4 sec, respectively. These results show that WSi2 nanocrystals with barrier-engineered tunnel layers are possible for application in nonvolatile memory devices.",
keywords = "Nano-Floating Gate Memory, Nanocrystals, Nonvolatile Memory, Tunnel Layer, WSi",
author = "Lee, {Dong Uk} and Kim, {Seon Pil} and Han, {Dong Seok} and Lee, {Hyo Jun} and Kim, {Eun Kyu} and You, {Hee Wook} and Cho, {Won Ju}",
year = "2011",
month = "12",
day = "1",
doi = "10.1166/jnn.2011.4302",
language = "English",
volume = "11",
pages = "9181--9184",
journal = "Journal of nanoscience and nanotechnology",
issn = "1533-4880",
number = "10",

}

Thermal stability of metal-silicide nanocrystal nonvolatile memory with barrier engineered tunnel layers. / Lee, Dong Uk; Kim, Seon Pil; Han, Dong Seok; Lee, Hyo Jun; Kim, Eun Kyu; You, Hee Wook; Cho, Won Ju.

In: Journal of Nanoscience and Nanotechnology, Vol. 11, No. 10, 01.12.2011, p. 9181-9184.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal stability of metal-silicide nanocrystal nonvolatile memory with barrier engineered tunnel layers

AU - Lee, Dong Uk

AU - Kim, Seon Pil

AU - Han, Dong Seok

AU - Lee, Hyo Jun

AU - Kim, Eun Kyu

AU - You, Hee Wook

AU - Cho, Won Ju

PY - 2011/12/1

Y1 - 2011/12/1

N2 - WSi 2 nanocrystal nonvolatile memory devices were fabricated with a silicon oxide-nitride-oxide (SiO 2: 2 nm/Si 3N 4:2 nm/SiO 2: 3 nm) tunnel layer. WSi 2 nanocrystals of 2.5 nm diameters and a density of 3.6×10 12 cm -2 were formed using radio frequency magnetron sputtering and annealing processes. The WSi 2 nanocrystal nonvolatile memory device exhibited strong thermal stability during writing/erasing operations at temperatures up to 125 °C. When the writing/erasing voltages were applied at +10 V/-10 V for 500 ms, the memory window of the initial ∼2.6 V decreased by approximately 1.1 V at 25 °C and 0.4 V at 125 °C after 10 4 sec, respectively. These results show that WSi2 nanocrystals with barrier-engineered tunnel layers are possible for application in nonvolatile memory devices.

AB - WSi 2 nanocrystal nonvolatile memory devices were fabricated with a silicon oxide-nitride-oxide (SiO 2: 2 nm/Si 3N 4:2 nm/SiO 2: 3 nm) tunnel layer. WSi 2 nanocrystals of 2.5 nm diameters and a density of 3.6×10 12 cm -2 were formed using radio frequency magnetron sputtering and annealing processes. The WSi 2 nanocrystal nonvolatile memory device exhibited strong thermal stability during writing/erasing operations at temperatures up to 125 °C. When the writing/erasing voltages were applied at +10 V/-10 V for 500 ms, the memory window of the initial ∼2.6 V decreased by approximately 1.1 V at 25 °C and 0.4 V at 125 °C after 10 4 sec, respectively. These results show that WSi2 nanocrystals with barrier-engineered tunnel layers are possible for application in nonvolatile memory devices.

KW - Nano-Floating Gate Memory

KW - Nanocrystals

KW - Nonvolatile Memory

KW - Tunnel Layer

KW - WSi

UR - http://www.scopus.com/inward/record.url?scp=84863141061&partnerID=8YFLogxK

U2 - 10.1166/jnn.2011.4302

DO - 10.1166/jnn.2011.4302

M3 - Article

C2 - 22400320

AN - SCOPUS:84863141061

VL - 11

SP - 9181

EP - 9184

JO - Journal of nanoscience and nanotechnology

JF - Journal of nanoscience and nanotechnology

SN - 1533-4880

IS - 10

ER -