Theoretical current bistability in organic memories consisting of a single active layer

Jae Hun Jung, Joo Hyoung You, Tae Whan Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A numerical simulation was introduce to investigate the memory effect due to the current bistability resulting from the existence of the traps in organic memory devices with a single active layer. The drift-diffusion model together with a field dependent mobility model and single level trap model was used to simulate the current bistability. The currents at the same reading voltage under various writing voltages were significantly larger than that without a writing voltage. The electric field induced by the trapped electrons near the electrode increased the device current, resulting in appearance of the current bistability in the device. These simulation results can help to improve understanding of the theoretical current bistability in organic memories.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages130-131
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Events20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan
Duration: 2007 Nov 52007 Nov 8

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC

Other

Others20th International Microprocesses and Nanotechnology Conference, MNC 2007
CountryJapan
CityKyoto
Period07/11/507/11/8

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Jung, J. H., You, J. H., & Kim, T. W. (2007). Theoretical current bistability in organic memories consisting of a single active layer. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC (pp. 130-131). [4456138] (Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC). https://doi.org/10.1109/IMNC.2007.4456138