The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

Research output: Contribution to journalArticle

201 Scopus citations

Abstract

The purpose of this paper is to give an overview of the state-of-the-art of metal oxide thin-film transistors (TFTs). First, the question of how to achieve high-performance oxide TFTs is addressed, including the exploration of new channel materials, the realization of low-resistance ohmic contacts and the implementation of high-k dielectric materials as the gate insulator. The electrical instability of the oxide TFTs is also discussed, which is critical for their application in flexible backplane electronics: special attention is given to the understanding of the degradation mechanism of oxide TFTs against bias thermal stress (BTS) and light illuminated BTS. Finally, the recent application of oxide TFTs in active matrix displays, such as electronic paper, liquid crystal displays and organic light-emitting diodes, is addressed.

Original languageEnglish
Article number034008
JournalSemiconductor Science and Technology
Volume26
Issue number3
DOIs
StatePublished - 2011 Mar 1

Fingerprint Dive into the research topics of 'The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays'. Together they form a unique fingerprint.

  • Cite this