The role of the Zn buffer layers in the structural and photoluminescence properties of ZnO films on Zn buffer layers deposited by RF magnetron sputtering

Chongmu Lee, Anna Park, Y. J. Cho, Wan In Lee, Hyoun Woo Kim

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Highly c-axis oriented ZnO thin films were grown on Si (100) substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated for the ZnO films with the buffer layers 90, 110, and 130 nm thick using X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by RF magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

Original languageEnglish
Pages (from-to)1364-1366
Number of pages3
JournalVacuum
Volume82
Issue number12
DOIs
StatePublished - 2008 Aug 8

Fingerprint

Buffer layers
Magnetron sputtering
Photoluminescence
magnetron sputtering
buffers
photoluminescence
Thin films
thin films
Atomic force microscopy
surface roughness
Surface roughness
atomic force microscopy
X ray diffraction
Substrates
diffraction
x rays

Keywords

  • AFM
  • PL
  • RF magnetron sputtering
  • XRD
  • Zn buffer layer
  • ZnO

Cite this

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The role of the Zn buffer layers in the structural and photoluminescence properties of ZnO films on Zn buffer layers deposited by RF magnetron sputtering. / Lee, Chongmu; Park, Anna; Cho, Y. J.; Lee, Wan In; Kim, Hyoun Woo.

In: Vacuum, Vol. 82, No. 12, 08.08.2008, p. 1364-1366.

Research output: Contribution to journalArticle

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