The instability change of flexible a-IGZO TFTs under different mechanical stress

Hyun Jun Jeong, Kyung Chul Ok, Hyun Mo Lee, Jin-Seong Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Amorphous InGaZnO (IGZO) thin film transistors (TFTs) were made on the polyimide (PI) substrate. We evaluated transistor performance and instability depends on mechanical stress, various bending radius (10mm, 5mm and 2mm) were applied to flexible substrate. The variation in the threshold voltage under NBTS was -0.58V (without bending)/-6.48V (2mm).

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages152-153
Number of pages2
ISBN (Electronic)9781510845503
StatePublished - 2015 Jan 1
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 2015 Dec 92015 Dec 11

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period15/12/915/12/11

Keywords

  • Flexible substrate
  • Instability
  • Mechanical stress
  • Oxide transistor

Fingerprint Dive into the research topics of 'The instability change of flexible a-IGZO TFTs under different mechanical stress'. Together they form a unique fingerprint.

  • Cite this

    Jeong, H. J., Ok, K. C., Lee, H. M., & Park, J-S. (2015). The instability change of flexible a-IGZO TFTs under different mechanical stress. In 22nd International Display Workshops, IDW 2015 (pp. 152-153). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.