The Influence of Cyclic Treatments with H2O2 and HF Solutions on the Roughness of Silicon Surface

Hye Young Lee, Choong Hun Lee, Hyeongtag Jeon, Dongwoon Jung

Research output: Contribution to journalArticle

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Abstract

The influence of cyclic treatments with H2O2/DIW (1:10) and HF/DIW (1:100) on the roughness of silicon surface in the wet chemical processing was investigated by atomic force microscopy (AFM). During the step of the SC-1 cleaning, there is a large increase in roughness on the silicon surface which will result in the poor gate oxide breakdown properties. The roughness of the silicon wafer after the SC-1 cleaning step was reduced by cyclic treatments of hydrogen peroxide solution and hydrofluoric acid solution instead of HF-only cleaning. AFM images after each step clearly illustrated that the average roughness of silicon surface after three times treatments with H2O2 and HF solutions was reduced by 10 times compared with that after the SC-1 cleaning step.

Original languageEnglish
Pages (from-to)737-740
Number of pages4
JournalBulletin of the Korean Chemical Society
Volume18
Issue number7
StatePublished - 1997 Dec 1

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