The Incident Angle Effect of A1 Adatom on the Growth Morphology of Al/Ni(001) System: Molecular Dynamics Simulation

Soon Gun Lee, Yong-Chae Chung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The morphology of A1 thin-film growth on an Ni(001) substrate according to the variation incident energy of adatoms was investigated by molecular dynamics simulation. A1 atoms apparently favored the layer-by-layer growth mode at a low incident angle. The growth mode of A1 film was, however, changed to follow the island growth mode according to the increasing adatom incident angle. Interestingly, the steering effect due to atomic attraction, which results in rougher surface, was significantly observed. The steering effect was quantitatively investigated through the extensive measurement of the trajectory with the variation of incident energy and incident angle near the artificially structured A1 step positioned on the Ni surface.

Original languageEnglish
Pages (from-to)2939-2941
Number of pages3
JournalIEEE Transactions on Magnetics
Volume42
Issue number10
DOIs
StatePublished - 2006 Jan 1

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Adatoms
Molecular dynamics
Computer simulation
Film growth
Trajectories
Thin films
Atoms
Substrates

Keywords

  • Al/Ni(001)
  • growth morphology
  • molecular dynamics simulation
  • steering effect

Cite this

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The Incident Angle Effect of A1 Adatom on the Growth Morphology of Al/Ni(001) System : Molecular Dynamics Simulation. / Lee, Soon Gun; Chung, Yong-Chae.

In: IEEE Transactions on Magnetics, Vol. 42, No. 10, 01.01.2006, p. 2939-2941.

Research output: Contribution to journalArticle

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