The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

Kwangmin Park, Eungjin Ahn, Yu Jin Jeon, Hyeonsik M. Cheong, Jin Soak Kim, Eun Kyu Kim, Jungil Lee, Young Ju Park, Gun Do Lee, Euijoon Yoon

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×1010 cm-2 was observed by atomic force microscopy before the capping process. The influences of GaAs, In0.53Ga0.47As, and InP capping layers (5-10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.

Original languageEnglish
Pages (from-to)169-173
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume26
Issue number1-4
DOIs
StatePublished - 2005 Feb 1
EventInternational Conference on Quantum Dots - Banff, Alberta, Canada
Duration: 2004 May 102004 May 13

Fingerprint

Metallorganic chemical vapor deposition
Semiconductor quantum dots
metalorganic chemical vapor deposition
Tuning
tuning
quantum dots
Wavelength
wavelengths
Photoluminescence
photoluminescence
Full width at half maximum
blue shift
red shift
gallium arsenide
indium arsenide
insertion
Atomic force microscopy
Optical properties
atomic force microscopy
Infrared radiation

Keywords

  • A1. Atomic force microscopy
  • A1. Metalorganic chemical vapor deposition
  • A1. Photoluminescence
  • A3. Indium arsenide
  • A3. Indium phosphide
  • A3. Quantum dots

Cite this

Park, Kwangmin ; Ahn, Eungjin ; Jeon, Yu Jin ; Cheong, Hyeonsik M. ; Kim, Jin Soak ; Kim, Eun Kyu ; Lee, Jungil ; Park, Young Ju ; Lee, Gun Do ; Yoon, Euijoon. / The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD. In: Physica E: Low-Dimensional Systems and Nanostructures. 2005 ; Vol. 26, No. 1-4. pp. 169-173.
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title = "The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD",
abstract = "InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×1010 cm-2 was observed by atomic force microscopy before the capping process. The influences of GaAs, In0.53Ga0.47As, and InP capping layers (5-10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.",
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The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD. / Park, Kwangmin; Ahn, Eungjin; Jeon, Yu Jin; Cheong, Hyeonsik M.; Kim, Jin Soak; Kim, Eun Kyu; Lee, Jungil; Park, Young Ju; Lee, Gun Do; Yoon, Euijoon.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 26, No. 1-4, 01.02.2005, p. 169-173.

Research output: Contribution to journalConference article

TY - JOUR

T1 - The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

AU - Park, Kwangmin

AU - Ahn, Eungjin

AU - Jeon, Yu Jin

AU - Cheong, Hyeonsik M.

AU - Kim, Jin Soak

AU - Kim, Eun Kyu

AU - Lee, Jungil

AU - Park, Young Ju

AU - Lee, Gun Do

AU - Yoon, Euijoon

PY - 2005/2/1

Y1 - 2005/2/1

N2 - InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×1010 cm-2 was observed by atomic force microscopy before the capping process. The influences of GaAs, In0.53Ga0.47As, and InP capping layers (5-10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.

AB - InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×1010 cm-2 was observed by atomic force microscopy before the capping process. The influences of GaAs, In0.53Ga0.47As, and InP capping layers (5-10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.

KW - A1. Atomic force microscopy

KW - A1. Metalorganic chemical vapor deposition

KW - A1. Photoluminescence

KW - A3. Indium arsenide

KW - A3. Indium phosphide

KW - A3. Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=13444251278&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2004.08.046

DO - 10.1016/j.physe.2004.08.046

M3 - Conference article

AN - SCOPUS:13444251278

VL - 26

SP - 169

EP - 173

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-4

ER -