The effects of the remote H-plasma treatments on the transition metallic impurities contaminated on the Si substrate

Taehang Ahn, Hyeongtag Jeon, Myounggu Park, Chongmu Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of the remote H-plasma treatments on the removal of the transition metallic impurities (Cr, Ni, Fe, Cu and Zn) contaminated on the Si substrate were investigated. The ICP-MS (inductively coupled plasma-mass spectroscope) results showed that the concentration ranges of the transition metallic impurities in the distilled water and the acetone were around 0.1 to 2.0 in ppb for Cr, Ni, Fe and Cu, and about 24 ppb for Zn. The amounts of the transition metallic impurities contaminated on the Si substrate were about 10 10 to 10 12 atoms/cm 2 and were reduced more than a factor of 10-100 by the remote H-plasma treatments, which were analyzed by TXRF (total reflection X-ray fluorescence). From AFM (atomic force microscope) measurement, the RMS (root mean square) value of the reference substrate which was contaminated initially was around 4.1 Å. But its surface roughness was improved to the levels of 2.0 Å in RMS value after the remote H-plasma treatment. The transition metallic impurities on the Si substrate are considered to be contaminated as the forms of the hydroxides, silioxides and oxides on/into the chemical oxides which are formed during the chemical contamination. In this study, the removal mechanism of the transition metallic impurities using the remote H-plasma treatments is proposed to be the combination of the gaseous and volatile compounds formation and the lift-off phenomena during the removal of the underlying chemical oxides.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume30
Issue numberSUPPL. PART 1
StatePublished - 1997 Dec 1

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impurities
mean square values
oxides
acetone
hydroxides
surface roughness
contamination
microscopes
spectrometers
fluorescence
water
atoms
x rays

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title = "The effects of the remote H-plasma treatments on the transition metallic impurities contaminated on the Si substrate",
abstract = "The effects of the remote H-plasma treatments on the removal of the transition metallic impurities (Cr, Ni, Fe, Cu and Zn) contaminated on the Si substrate were investigated. The ICP-MS (inductively coupled plasma-mass spectroscope) results showed that the concentration ranges of the transition metallic impurities in the distilled water and the acetone were around 0.1 to 2.0 in ppb for Cr, Ni, Fe and Cu, and about 24 ppb for Zn. The amounts of the transition metallic impurities contaminated on the Si substrate were about 10 10 to 10 12 atoms/cm 2 and were reduced more than a factor of 10-100 by the remote H-plasma treatments, which were analyzed by TXRF (total reflection X-ray fluorescence). From AFM (atomic force microscope) measurement, the RMS (root mean square) value of the reference substrate which was contaminated initially was around 4.1 {\AA}. But its surface roughness was improved to the levels of 2.0 {\AA} in RMS value after the remote H-plasma treatment. The transition metallic impurities on the Si substrate are considered to be contaminated as the forms of the hydroxides, silioxides and oxides on/into the chemical oxides which are formed during the chemical contamination. In this study, the removal mechanism of the transition metallic impurities using the remote H-plasma treatments is proposed to be the combination of the gaseous and volatile compounds formation and the lift-off phenomena during the removal of the underlying chemical oxides.",
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The effects of the remote H-plasma treatments on the transition metallic impurities contaminated on the Si substrate. / Ahn, Taehang; Jeon, Hyeongtag; Park, Myounggu; Lee, Chongmu.

In: Journal of the Korean Physical Society, Vol. 30, No. SUPPL. PART 1, 01.12.1997.

Research output: Contribution to journalArticle

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AB - The effects of the remote H-plasma treatments on the removal of the transition metallic impurities (Cr, Ni, Fe, Cu and Zn) contaminated on the Si substrate were investigated. The ICP-MS (inductively coupled plasma-mass spectroscope) results showed that the concentration ranges of the transition metallic impurities in the distilled water and the acetone were around 0.1 to 2.0 in ppb for Cr, Ni, Fe and Cu, and about 24 ppb for Zn. The amounts of the transition metallic impurities contaminated on the Si substrate were about 10 10 to 10 12 atoms/cm 2 and were reduced more than a factor of 10-100 by the remote H-plasma treatments, which were analyzed by TXRF (total reflection X-ray fluorescence). From AFM (atomic force microscope) measurement, the RMS (root mean square) value of the reference substrate which was contaminated initially was around 4.1 Å. But its surface roughness was improved to the levels of 2.0 Å in RMS value after the remote H-plasma treatment. The transition metallic impurities on the Si substrate are considered to be contaminated as the forms of the hydroxides, silioxides and oxides on/into the chemical oxides which are formed during the chemical contamination. In this study, the removal mechanism of the transition metallic impurities using the remote H-plasma treatments is proposed to be the combination of the gaseous and volatile compounds formation and the lift-off phenomena during the removal of the underlying chemical oxides.

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