The effects of pretreatment, CH 4 gas ratio and bias potential on the microstructure of microwave plasma enhanced chemical vapor deposited diamond thin films

Jong Wan Park, You Kee Lee, Sei Hyun Lee, Kwang Joon Cho, Jae Suk Lee, Seoghyeong Lee, Hyeongtag Jeon, Ji Hwan Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Diamond thin films were deposited on p-type Si(100) wafers by microwave plasma enhanced chemical vapor deposition (MPECVD) using mixtures of H 2 , CH 4 and O 2 gases. Deposition was carried out at a substrate temperature of 900°C and a pressure of 40 Torr. In order to examine the effect of pretreatment on the film formation. SiC and diamond powders were used as pretreatment powders. Also, the methane gas ratio in the gas mixture was varied to observe its effect on the crystal structure of diamond films. Furthermore, the substrate bias effect on the diamond film formation was examined. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy were utilized to characterize the microstructures of diamond thin films. The highest nucleus density was obtained by pretreatment with diamond powders of 40-60 μm in size and a negative bias potential to the substrates. The deposited diamond films were found to contain many defects. The density of the defects increased with CH 4 concentration in the gas mixtures. It is believed that the gas mixture with a high CH 4 ratio must have promoted the formation of a graphite phase, probably due to the insufficient amount of atomic hydrogen acting as a selective etchant for graphite. Diamond films with good quality and a nucleus density of 108/cm 2 could be deposited by utilizing the combined effects of a negative bias potential and a magnetic field.

Original languageEnglish
Pages (from-to)1238-1244
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number3 SUPPL. A
StatePublished - 1997 Mar 1

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Diamond films
diamond films
pretreatment
diamonds
Vapors
Microwaves
methylidyne
vapors
gas mixtures
Plasmas
microwaves
Thin films
microstructure
Microstructure
thin films
Gases
gases
Gas mixtures
graphite
Powders

Keywords

  • Defects
  • Diamond thin films
  • MPECVD
  • Methane gas ratio effect
  • Microstructures
  • Pretreatment effect
  • Substrate bias effect

Cite this

@article{ade5440ddd9b462d8167d1649348c971,
title = "The effects of pretreatment, CH 4 gas ratio and bias potential on the microstructure of microwave plasma enhanced chemical vapor deposited diamond thin films",
abstract = "Diamond thin films were deposited on p-type Si(100) wafers by microwave plasma enhanced chemical vapor deposition (MPECVD) using mixtures of H 2 , CH 4 and O 2 gases. Deposition was carried out at a substrate temperature of 900°C and a pressure of 40 Torr. In order to examine the effect of pretreatment on the film formation. SiC and diamond powders were used as pretreatment powders. Also, the methane gas ratio in the gas mixture was varied to observe its effect on the crystal structure of diamond films. Furthermore, the substrate bias effect on the diamond film formation was examined. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy were utilized to characterize the microstructures of diamond thin films. The highest nucleus density was obtained by pretreatment with diamond powders of 40-60 μm in size and a negative bias potential to the substrates. The deposited diamond films were found to contain many defects. The density of the defects increased with CH 4 concentration in the gas mixtures. It is believed that the gas mixture with a high CH 4 ratio must have promoted the formation of a graphite phase, probably due to the insufficient amount of atomic hydrogen acting as a selective etchant for graphite. Diamond films with good quality and a nucleus density of 108/cm 2 could be deposited by utilizing the combined effects of a negative bias potential and a magnetic field.",
keywords = "Defects, Diamond thin films, MPECVD, Methane gas ratio effect, Microstructures, Pretreatment effect, Substrate bias effect",
author = "Park, {Jong Wan} and Lee, {You Kee} and Lee, {Sei Hyun} and Cho, {Kwang Joon} and Lee, {Jae Suk} and Seoghyeong Lee and Hyeongtag Jeon and Choi, {Ji Hwan}",
year = "1997",
month = "3",
day = "1",
language = "English",
volume = "36",
pages = "1238--1244",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",
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The effects of pretreatment, CH 4 gas ratio and bias potential on the microstructure of microwave plasma enhanced chemical vapor deposited diamond thin films . / Park, Jong Wan; Lee, You Kee; Lee, Sei Hyun; Cho, Kwang Joon; Lee, Jae Suk; Lee, Seoghyeong; Jeon, Hyeongtag; Choi, Ji Hwan.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 3 SUPPL. A, 01.03.1997, p. 1238-1244.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effects of pretreatment, CH 4 gas ratio and bias potential on the microstructure of microwave plasma enhanced chemical vapor deposited diamond thin films

AU - Park, Jong Wan

AU - Lee, You Kee

AU - Lee, Sei Hyun

AU - Cho, Kwang Joon

AU - Lee, Jae Suk

AU - Lee, Seoghyeong

AU - Jeon, Hyeongtag

AU - Choi, Ji Hwan

PY - 1997/3/1

Y1 - 1997/3/1

N2 - Diamond thin films were deposited on p-type Si(100) wafers by microwave plasma enhanced chemical vapor deposition (MPECVD) using mixtures of H 2 , CH 4 and O 2 gases. Deposition was carried out at a substrate temperature of 900°C and a pressure of 40 Torr. In order to examine the effect of pretreatment on the film formation. SiC and diamond powders were used as pretreatment powders. Also, the methane gas ratio in the gas mixture was varied to observe its effect on the crystal structure of diamond films. Furthermore, the substrate bias effect on the diamond film formation was examined. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy were utilized to characterize the microstructures of diamond thin films. The highest nucleus density was obtained by pretreatment with diamond powders of 40-60 μm in size and a negative bias potential to the substrates. The deposited diamond films were found to contain many defects. The density of the defects increased with CH 4 concentration in the gas mixtures. It is believed that the gas mixture with a high CH 4 ratio must have promoted the formation of a graphite phase, probably due to the insufficient amount of atomic hydrogen acting as a selective etchant for graphite. Diamond films with good quality and a nucleus density of 108/cm 2 could be deposited by utilizing the combined effects of a negative bias potential and a magnetic field.

AB - Diamond thin films were deposited on p-type Si(100) wafers by microwave plasma enhanced chemical vapor deposition (MPECVD) using mixtures of H 2 , CH 4 and O 2 gases. Deposition was carried out at a substrate temperature of 900°C and a pressure of 40 Torr. In order to examine the effect of pretreatment on the film formation. SiC and diamond powders were used as pretreatment powders. Also, the methane gas ratio in the gas mixture was varied to observe its effect on the crystal structure of diamond films. Furthermore, the substrate bias effect on the diamond film formation was examined. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy were utilized to characterize the microstructures of diamond thin films. The highest nucleus density was obtained by pretreatment with diamond powders of 40-60 μm in size and a negative bias potential to the substrates. The deposited diamond films were found to contain many defects. The density of the defects increased with CH 4 concentration in the gas mixtures. It is believed that the gas mixture with a high CH 4 ratio must have promoted the formation of a graphite phase, probably due to the insufficient amount of atomic hydrogen acting as a selective etchant for graphite. Diamond films with good quality and a nucleus density of 108/cm 2 could be deposited by utilizing the combined effects of a negative bias potential and a magnetic field.

KW - Defects

KW - Diamond thin films

KW - MPECVD

KW - Methane gas ratio effect

KW - Microstructures

KW - Pretreatment effect

KW - Substrate bias effect

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M3 - Article

AN - SCOPUS:0031094796

VL - 36

SP - 1238

EP - 1244

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

SN - 0021-4922

IS - 3 SUPPL. A

ER -