The controlled growth and field emission of Sn-doped and undoped AlN nanorods prepared by halide vapor phase epitaxy

Sang Wook Ui, Young Jong Park, Jae Seok Choi, Sung Churl Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report vapor-solid growth of Sn-doped and undopedAlNnanorods on n-type Si(100) wafers by halide vapor phase epitaxy via a non-catalytic vapor-solid (VS) growth mechanism. Pure Al and Sn metal powders were used as starting materials, and the reaction temperature was 700 °C. By controlling the HCl flow rate, we confirmed that the morphology of Sn-doped and undoped AlN changed into thin flims, nanorods and nanoneedles. The Sn-doped and undopedAlNnanorodswere 500 nm in length, and diameters were in the range of 15-100 nm. The Sn-doped and undopedAlNnanorods grew along the c-axis. The turn-on field and threshold electric field were decreased from 4.2 to 3.87 V/μm and 6.4 to 5.73 V/μm by Sn-doping, while the estimated field enhancement factorswere increased from 523 to 917.

Original languageEnglish
Pages (from-to)468-472
Number of pages5
JournalJournal of Ceramic Processing Research
Volume12
Issue number4
StatePublished - 2011 Dec 1

Fingerprint

Vapor phase epitaxy
Nanorods
Field emission
Vapors
Nanoneedles
Powder metals
Electric fields
Doping (additives)
Flow rate
Temperature

Keywords

  • Field emission
  • Halide vapor phase epitaxy
  • Sn-doped AlN nanorods
  • Vapor-solid mechanism

Cite this

@article{db0c6e91d6bc4363ab558210b34805eb,
title = "The controlled growth and field emission of Sn-doped and undoped AlN nanorods prepared by halide vapor phase epitaxy",
abstract = "We report vapor-solid growth of Sn-doped and undopedAlNnanorods on n-type Si(100) wafers by halide vapor phase epitaxy via a non-catalytic vapor-solid (VS) growth mechanism. Pure Al and Sn metal powders were used as starting materials, and the reaction temperature was 700 °C. By controlling the HCl flow rate, we confirmed that the morphology of Sn-doped and undoped AlN changed into thin flims, nanorods and nanoneedles. The Sn-doped and undopedAlNnanorodswere 500 nm in length, and diameters were in the range of 15-100 nm. The Sn-doped and undopedAlNnanorods grew along the c-axis. The turn-on field and threshold electric field were decreased from 4.2 to 3.87 V/μm and 6.4 to 5.73 V/μm by Sn-doping, while the estimated field enhancement factorswere increased from 523 to 917.",
keywords = "Field emission, Halide vapor phase epitaxy, Sn-doped AlN nanorods, Vapor-solid mechanism",
author = "Ui, {Sang Wook} and Park, {Young Jong} and Choi, {Jae Seok} and Choi, {Sung Churl}",
year = "2011",
month = "12",
day = "1",
language = "English",
volume = "12",
pages = "468--472",
journal = "Journal of Ceramic Processing Research",
issn = "1229-9162",
number = "4",

}

The controlled growth and field emission of Sn-doped and undoped AlN nanorods prepared by halide vapor phase epitaxy. / Ui, Sang Wook; Park, Young Jong; Choi, Jae Seok; Choi, Sung Churl.

In: Journal of Ceramic Processing Research, Vol. 12, No. 4, 01.12.2011, p. 468-472.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The controlled growth and field emission of Sn-doped and undoped AlN nanorods prepared by halide vapor phase epitaxy

AU - Ui, Sang Wook

AU - Park, Young Jong

AU - Choi, Jae Seok

AU - Choi, Sung Churl

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We report vapor-solid growth of Sn-doped and undopedAlNnanorods on n-type Si(100) wafers by halide vapor phase epitaxy via a non-catalytic vapor-solid (VS) growth mechanism. Pure Al and Sn metal powders were used as starting materials, and the reaction temperature was 700 °C. By controlling the HCl flow rate, we confirmed that the morphology of Sn-doped and undoped AlN changed into thin flims, nanorods and nanoneedles. The Sn-doped and undopedAlNnanorodswere 500 nm in length, and diameters were in the range of 15-100 nm. The Sn-doped and undopedAlNnanorods grew along the c-axis. The turn-on field and threshold electric field were decreased from 4.2 to 3.87 V/μm and 6.4 to 5.73 V/μm by Sn-doping, while the estimated field enhancement factorswere increased from 523 to 917.

AB - We report vapor-solid growth of Sn-doped and undopedAlNnanorods on n-type Si(100) wafers by halide vapor phase epitaxy via a non-catalytic vapor-solid (VS) growth mechanism. Pure Al and Sn metal powders were used as starting materials, and the reaction temperature was 700 °C. By controlling the HCl flow rate, we confirmed that the morphology of Sn-doped and undoped AlN changed into thin flims, nanorods and nanoneedles. The Sn-doped and undopedAlNnanorodswere 500 nm in length, and diameters were in the range of 15-100 nm. The Sn-doped and undopedAlNnanorods grew along the c-axis. The turn-on field and threshold electric field were decreased from 4.2 to 3.87 V/μm and 6.4 to 5.73 V/μm by Sn-doping, while the estimated field enhancement factorswere increased from 523 to 917.

KW - Field emission

KW - Halide vapor phase epitaxy

KW - Sn-doped AlN nanorods

KW - Vapor-solid mechanism

UR - http://www.scopus.com/inward/record.url?scp=84863018542&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84863018542

VL - 12

SP - 468

EP - 472

JO - Journal of Ceramic Processing Research

JF - Journal of Ceramic Processing Research

SN - 1229-9162

IS - 4

ER -