Technologies and development of full color field emission display devices

J. M. Kim, Jin Pyo Hong, N. S. Park, J. W. Kim, J. H. Choi, J. H. Kang, J. E. Jang, Y. S. Ryu, Y. C. Yu

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Abstract

We report the development of 4 inches full color FED devices with the reliability analysis. Each pixel is composed of 4900 tips, which results in 80 million tips for 4 inches color diagonal panel. The hole pattern of the chromium gate is maintained at 1.1±0.1 μm. The low voltage phosphors such as Y2O2S:Eu, ZnS:(Ag,Cl,Al), ZnS:(Cu,Al,I) for red, blue and green with special surface treatments are developed and their related screening technologies are studied with electrical analysis. The fully moving images are displayed at the anode bias of 250 volts. The emission current profile of the field emission for the color anode is well investigated with the color anode patterning. We analyze the relationship between the electron emission profile on the full panel. The brightness at white color mode of color FED is approximately 80 cd/m2.

Original languageEnglish
Pages137-140
Number of pages4
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1997 4th Asian Symposium on Information Display - Hong Kong, Hong Kong
Duration: 1997 Feb 131997 Feb 14

Other

OtherProceedings of the 1997 4th Asian Symposium on Information Display
CityHong Kong, Hong Kong
Period97/02/1397/02/14

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Kim, J. M., Hong, J. P., Park, N. S., Kim, J. W., Choi, J. H., Kang, J. H., ... Yu, Y. C. (1997). Technologies and development of full color field emission display devices. 137-140. Paper presented at Proceedings of the 1997 4th Asian Symposium on Information Display, Hong Kong, Hong Kong, .