Synthesis of novel polymers containing photoacid generator and its application in atomic force microscope lithography

Gijin Kwun, Eujean Jang, Gwangmin Kwon, Haiwon Lee

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A photoacid generator (PAG) played an important role in withdrawing an electron in atomic force microcopy (AFM) anodization lithography. In case of the silicon substrate coated by the polymer with higher content of PAG, oxide patterns were fabricated in lower threshold lithographic bias. And the oxide patterns were grown bigger on the PAG polymer coated silicon than on bare silicon. These results indicate that PAG contributes to accept electrons sufficient to grow oxide patterns. The organic resist including PAG will be effective material to improve the lithographic speed of AFM anodization.

Original languageEnglish
Pages (from-to)S121-S123
JournalCurrent Applied Physics
Volume9
Issue number1 SUPPL.
DOIs
StatePublished - 2009 Jan 1

Keywords

  • AFM anodization lithography
  • Atomic force microscope (AFM)
  • Lithographic speed
  • Photoacid generator (PAG)

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