A photoacid generator (PAG) played an important role in withdrawing an electron in atomic force microcopy (AFM) anodization lithography. In case of the silicon substrate coated by the polymer with higher content of PAG, oxide patterns were fabricated in lower threshold lithographic bias. And the oxide patterns were grown bigger on the PAG polymer coated silicon than on bare silicon. These results indicate that PAG contributes to accept electrons sufficient to grow oxide patterns. The organic resist including PAG will be effective material to improve the lithographic speed of AFM anodization.
- AFM anodization lithography
- Atomic force microscope (AFM)
- Lithographic speed
- Photoacid generator (PAG)