Surface magnetic anisotropy of Co-Hf thin films

W. Y. Lim, J. S. Baek, Y. Y. Kim, S. J. Lee, S. C. Yu, S. H. Lee

Research output: Contribution to journalConference article

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In order to investigate the effect of Hf content and the thickness of Co100-xHfx (x = 16, 24, 32 at.%) films we observed the absorption lines of spin wave resonance through the ferromagnetic resonance (FMR) measurement. One volume spin wave mode and two surface spin wave modes were observed for all the samples because the surface anisotropy constants of both sides of the films are less than zero. When the annealing temperature for Co84Hf16 film increased up to 225 °C the surface magnetic anisotropy constant Ks2 of the film-substrate interface decreased from -0.07 erg/cm2 to -0.32 erg/cm2 and the Ks1 constant of the film-air interface varied from 0.18 erg/cm2 to -47 erg/cm2. In Co76Hf24 film Ks2 decreased a little from -0.31 erg/cm2 to -0.41 erg/cm2 and Ks1 decreased rapidly from -0.19 erg/cm2 to -0.60 erg/cm2. In general it is shown that the surface anisotropy at the film-air interface is very sensitive to Hf content and the annealing temperature. This result is due to the increase of Co content caused by oxidation of Hf atoms near the film-air interface during low temperature annealing (150 to approximately 175 °C) and the diffusion of Co atoms during high temperature annealing (200 to approximately 225 °C).

Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalElectron Technology (Warsaw)
Issue number1
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1997 3rd Korean-Polish Joint Seminar on Physical Properties of Magnetic Materials - Krakow, Pol
Duration: 1997 Aug 261997 Aug 28


Cite this

Lim, W. Y., Baek, J. S., Kim, Y. Y., Lee, S. J., Yu, S. C., & Lee, S. H. (1998). Surface magnetic anisotropy of Co-Hf thin films. Electron Technology (Warsaw), 31(1), 60-64.