Suppression of the phase transition and agglomeration of TiSi2 by addition of Zr element

Sanghyun Yoon, Hyeongtag Jeon

Research output: Contribution to journalConference article

Abstract

The formation of C49 TiSi2 phase at high temperatures was investigated by adding the Zr contents in Ti-silicide film. Stabilizing the C49 TiSi2 phase which exhibits lower surface and interface energies than those of the C54 TiSi2 phase at high temperatures was expected to suppress the problems of Ti-silicide, such as the phase transition and the film agglomeration. The thin films of Ti and Zr were co-deposited (40 nm) on Si substrates in the dual e-beam evaporation system equipped with an ion pump and its base pressure of approx. 5 × 10-9 torr. The amounts of Zr contents (5 and 10 atomic %) added on Ti-silicide were monitored by in-situ quartz crystal monitor. Immediately after the deposition, this film was annealed by ex-situ vacuum furnace at temperatures between 600°C and 900°C in 100°C increments. The identification of the phase and the chemical composition were investigated by XRD and AES, respectively. The surface and interface morphologies were examined using cross-sectional TEM. The phase transition temperature of TiSi2 was raised with increasing Zr contents. The agglomeration of TiSi2 film was also suppressed by adding Zr element and much improved interface morphologies were observed.

Original languageEnglish
Pages (from-to)225-230
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume514
StatePublished - 1998 Dec 1
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1998 Apr 131998 Apr 16

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Agglomeration
Phase transitions
Ion Pumps
Vacuum furnaces
Quartz
Temperature
Superconducting transition temperature
Evaporation
Pumps
Transmission electron microscopy
Thin films
Crystals
Ions
Substrates
Chemical analysis

Cite this

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title = "Suppression of the phase transition and agglomeration of TiSi2 by addition of Zr element",
abstract = "The formation of C49 TiSi2 phase at high temperatures was investigated by adding the Zr contents in Ti-silicide film. Stabilizing the C49 TiSi2 phase which exhibits lower surface and interface energies than those of the C54 TiSi2 phase at high temperatures was expected to suppress the problems of Ti-silicide, such as the phase transition and the film agglomeration. The thin films of Ti and Zr were co-deposited (40 nm) on Si substrates in the dual e-beam evaporation system equipped with an ion pump and its base pressure of approx. 5 × 10-9 torr. The amounts of Zr contents (5 and 10 atomic {\%}) added on Ti-silicide were monitored by in-situ quartz crystal monitor. Immediately after the deposition, this film was annealed by ex-situ vacuum furnace at temperatures between 600°C and 900°C in 100°C increments. The identification of the phase and the chemical composition were investigated by XRD and AES, respectively. The surface and interface morphologies were examined using cross-sectional TEM. The phase transition temperature of TiSi2 was raised with increasing Zr contents. The agglomeration of TiSi2 film was also suppressed by adding Zr element and much improved interface morphologies were observed.",
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Suppression of the phase transition and agglomeration of TiSi2 by addition of Zr element. / Yoon, Sanghyun; Jeon, Hyeongtag.

In: Materials Research Society Symposium - Proceedings, Vol. 514, 01.12.1998, p. 225-230.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Suppression of the phase transition and agglomeration of TiSi2 by addition of Zr element

AU - Yoon, Sanghyun

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N2 - The formation of C49 TiSi2 phase at high temperatures was investigated by adding the Zr contents in Ti-silicide film. Stabilizing the C49 TiSi2 phase which exhibits lower surface and interface energies than those of the C54 TiSi2 phase at high temperatures was expected to suppress the problems of Ti-silicide, such as the phase transition and the film agglomeration. The thin films of Ti and Zr were co-deposited (40 nm) on Si substrates in the dual e-beam evaporation system equipped with an ion pump and its base pressure of approx. 5 × 10-9 torr. The amounts of Zr contents (5 and 10 atomic %) added on Ti-silicide were monitored by in-situ quartz crystal monitor. Immediately after the deposition, this film was annealed by ex-situ vacuum furnace at temperatures between 600°C and 900°C in 100°C increments. The identification of the phase and the chemical composition were investigated by XRD and AES, respectively. The surface and interface morphologies were examined using cross-sectional TEM. The phase transition temperature of TiSi2 was raised with increasing Zr contents. The agglomeration of TiSi2 film was also suppressed by adding Zr element and much improved interface morphologies were observed.

AB - The formation of C49 TiSi2 phase at high temperatures was investigated by adding the Zr contents in Ti-silicide film. Stabilizing the C49 TiSi2 phase which exhibits lower surface and interface energies than those of the C54 TiSi2 phase at high temperatures was expected to suppress the problems of Ti-silicide, such as the phase transition and the film agglomeration. The thin films of Ti and Zr were co-deposited (40 nm) on Si substrates in the dual e-beam evaporation system equipped with an ion pump and its base pressure of approx. 5 × 10-9 torr. The amounts of Zr contents (5 and 10 atomic %) added on Ti-silicide were monitored by in-situ quartz crystal monitor. Immediately after the deposition, this film was annealed by ex-situ vacuum furnace at temperatures between 600°C and 900°C in 100°C increments. The identification of the phase and the chemical composition were investigated by XRD and AES, respectively. The surface and interface morphologies were examined using cross-sectional TEM. The phase transition temperature of TiSi2 was raised with increasing Zr contents. The agglomeration of TiSi2 film was also suppressed by adding Zr element and much improved interface morphologies were observed.

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