Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy

Eun Kyu Kim, J. S. Kim, S. Y. Kwon, H. J. Kim, E. Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The use of deep level transient spectroscopy (DLTS) for the analysis of energy band of InGaN/GaN self assembled quantum dots (QDs) was described. The QDs were grown on Al2O3 substrates by self-assembled method using metal-organic chemical vapor deposition system. The density of the QDs was found to be 7.0 × 109 cm-2, which was confirmed by atomic force microscope measurement. From the Arrhenius plot, the apparent activation energy and the emission cross section by the carrier emission process of QD-related levels were extracted 0.37 eV from the conduction band edge and 1.13 × 10-16 cm2, respectively.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Pages172-173
Number of pages2
StatePublished - 2004 Dec 1
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: 2004 Oct 262004 Oct 29

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period04/10/2604/10/29

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Deep level transient spectroscopy
Band structure
Semiconductor quantum dots
Arrhenius plots
Organic chemicals
Conduction bands
Chemical vapor deposition
Microscopes
Activation energy
Substrates
Metals

Cite this

Kim, E. K., Kim, J. S., Kwon, S. Y., Kim, H. J., & Yoon, E. (2004). Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy. In Digest of Papers - Microprocesses and Nanotechnology 2004 (pp. 172-173). (Digest of Papers - Microprocesses and Nanotechnology 2004).
Kim, Eun Kyu ; Kim, J. S. ; Kwon, S. Y. ; Kim, H. J. ; Yoon, E. / Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy. Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. pp. 172-173 (Digest of Papers - Microprocesses and Nanotechnology 2004).
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abstract = "The use of deep level transient spectroscopy (DLTS) for the analysis of energy band of InGaN/GaN self assembled quantum dots (QDs) was described. The QDs were grown on Al2O3 substrates by self-assembled method using metal-organic chemical vapor deposition system. The density of the QDs was found to be 7.0 × 109 cm-2, which was confirmed by atomic force microscope measurement. From the Arrhenius plot, the apparent activation energy and the emission cross section by the carrier emission process of QD-related levels were extracted 0.37 eV from the conduction band edge and 1.13 × 10-16 cm2, respectively.",
author = "Kim, {Eun Kyu} and Kim, {J. S.} and Kwon, {S. Y.} and Kim, {H. J.} and E. Yoon",
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Kim, EK, Kim, JS, Kwon, SY, Kim, HJ & Yoon, E 2004, Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy. in Digest of Papers - Microprocesses and Nanotechnology 2004. Digest of Papers - Microprocesses and Nanotechnology 2004, pp. 172-173, 2004 International Microprocesses and Nanotechnology Conference, Osaka, Japan, 04/10/26.

Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy. / Kim, Eun Kyu; Kim, J. S.; Kwon, S. Y.; Kim, H. J.; Yoon, E.

Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. p. 172-173 (Digest of Papers - Microprocesses and Nanotechnology 2004).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy

AU - Kim, Eun Kyu

AU - Kim, J. S.

AU - Kwon, S. Y.

AU - Kim, H. J.

AU - Yoon, E.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The use of deep level transient spectroscopy (DLTS) for the analysis of energy band of InGaN/GaN self assembled quantum dots (QDs) was described. The QDs were grown on Al2O3 substrates by self-assembled method using metal-organic chemical vapor deposition system. The density of the QDs was found to be 7.0 × 109 cm-2, which was confirmed by atomic force microscope measurement. From the Arrhenius plot, the apparent activation energy and the emission cross section by the carrier emission process of QD-related levels were extracted 0.37 eV from the conduction band edge and 1.13 × 10-16 cm2, respectively.

AB - The use of deep level transient spectroscopy (DLTS) for the analysis of energy band of InGaN/GaN self assembled quantum dots (QDs) was described. The QDs were grown on Al2O3 substrates by self-assembled method using metal-organic chemical vapor deposition system. The density of the QDs was found to be 7.0 × 109 cm-2, which was confirmed by atomic force microscope measurement. From the Arrhenius plot, the apparent activation energy and the emission cross section by the carrier emission process of QD-related levels were extracted 0.37 eV from the conduction band edge and 1.13 × 10-16 cm2, respectively.

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M3 - Conference contribution

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SN - 4990247205

T3 - Digest of Papers - Microprocesses and Nanotechnology 2004

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BT - Digest of Papers - Microprocesses and Nanotechnology 2004

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Kim EK, Kim JS, Kwon SY, Kim HJ, Yoon E. Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy. In Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. p. 172-173. (Digest of Papers - Microprocesses and Nanotechnology 2004).