Study of defects on Zn0.95Mn0.05O by using deep level transient spectroscopy

Jae-Hoon Kim, Hooyoung Song, Eun Kyu Kim, Young Dong Kim, Hong Chu

Research output: Contribution to journalArticle

Abstract

Defect states are important to the characteristics of diluted magnetic semiconductor materials. In this study, the electrical activation energies of the defects of Zn0.95Mn0.05O were analyzed by using deep level transient spectroscopy (DLTS). The Zn0.95Mn0.05O films had been deposited with growth temperature modulation by using a pulsed laser deposition method with a mixture target. In the films grown at 450 °C, the carrier concentration was about 1 × 1016 cm-3 based on the carrier profile of the capacitance-voltage measurement. X-ray diffraction showed a ZnO based Wurtzite structure. The DLTS signals appearing in the ZnMnO have an activation energy of 0.13 eV and are thougth to be due to defects originating from Mn-related site. The oxygen vacancy defect was also observed in the DLTS spectra.

Original languageEnglish
Pages (from-to)2374-2377
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 1
StatePublished - 2008 Nov 1

Fingerprint

defects
spectroscopy
activation energy
wurtzite
electrical measurement
pulsed laser deposition
capacitance
modulation
oxygen
profiles
diffraction
x rays
temperature

Keywords

  • Deep level transient spectroscopy
  • Diluted magnetic semiconductor
  • ZnMnO
  • ZnO

Cite this

Kim, Jae-Hoon ; Song, Hooyoung ; Kim, Eun Kyu ; Kim, Young Dong ; Chu, Hong. / Study of defects on Zn0.95Mn0.05O by using deep level transient spectroscopy. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 5 PART 1. pp. 2374-2377.
@article{1fac14f61ab7479eb6f0744b99a46cf3,
title = "Study of defects on Zn0.95Mn0.05O by using deep level transient spectroscopy",
abstract = "Defect states are important to the characteristics of diluted magnetic semiconductor materials. In this study, the electrical activation energies of the defects of Zn0.95Mn0.05O were analyzed by using deep level transient spectroscopy (DLTS). The Zn0.95Mn0.05O films had been deposited with growth temperature modulation by using a pulsed laser deposition method with a mixture target. In the films grown at 450 °C, the carrier concentration was about 1 × 1016 cm-3 based on the carrier profile of the capacitance-voltage measurement. X-ray diffraction showed a ZnO based Wurtzite structure. The DLTS signals appearing in the ZnMnO have an activation energy of 0.13 eV and are thougth to be due to defects originating from Mn-related site. The oxygen vacancy defect was also observed in the DLTS spectra.",
keywords = "Deep level transient spectroscopy, Diluted magnetic semiconductor, ZnMnO, ZnO",
author = "Jae-Hoon Kim and Hooyoung Song and Kim, {Eun Kyu} and Kim, {Young Dong} and Hong Chu",
year = "2008",
month = "11",
day = "1",
language = "English",
volume = "53",
pages = "2374--2377",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
number = "5 PART 1",

}

Study of defects on Zn0.95Mn0.05O by using deep level transient spectroscopy. / Kim, Jae-Hoon; Song, Hooyoung; Kim, Eun Kyu; Kim, Young Dong; Chu, Hong.

In: Journal of the Korean Physical Society, Vol. 53, No. 5 PART 1, 01.11.2008, p. 2374-2377.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study of defects on Zn0.95Mn0.05O by using deep level transient spectroscopy

AU - Kim, Jae-Hoon

AU - Song, Hooyoung

AU - Kim, Eun Kyu

AU - Kim, Young Dong

AU - Chu, Hong

PY - 2008/11/1

Y1 - 2008/11/1

N2 - Defect states are important to the characteristics of diluted magnetic semiconductor materials. In this study, the electrical activation energies of the defects of Zn0.95Mn0.05O were analyzed by using deep level transient spectroscopy (DLTS). The Zn0.95Mn0.05O films had been deposited with growth temperature modulation by using a pulsed laser deposition method with a mixture target. In the films grown at 450 °C, the carrier concentration was about 1 × 1016 cm-3 based on the carrier profile of the capacitance-voltage measurement. X-ray diffraction showed a ZnO based Wurtzite structure. The DLTS signals appearing in the ZnMnO have an activation energy of 0.13 eV and are thougth to be due to defects originating from Mn-related site. The oxygen vacancy defect was also observed in the DLTS spectra.

AB - Defect states are important to the characteristics of diluted magnetic semiconductor materials. In this study, the electrical activation energies of the defects of Zn0.95Mn0.05O were analyzed by using deep level transient spectroscopy (DLTS). The Zn0.95Mn0.05O films had been deposited with growth temperature modulation by using a pulsed laser deposition method with a mixture target. In the films grown at 450 °C, the carrier concentration was about 1 × 1016 cm-3 based on the carrier profile of the capacitance-voltage measurement. X-ray diffraction showed a ZnO based Wurtzite structure. The DLTS signals appearing in the ZnMnO have an activation energy of 0.13 eV and are thougth to be due to defects originating from Mn-related site. The oxygen vacancy defect was also observed in the DLTS spectra.

KW - Deep level transient spectroscopy

KW - Diluted magnetic semiconductor

KW - ZnMnO

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=57349173599&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:57349173599

VL - 53

SP - 2374

EP - 2377

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 5 PART 1

ER -