Structure of the InAs{100}-(4 × 2) epilayer surface on InP

M. M. Sung, J. W. Rabalais

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Abstract

The composition and structure of an InAs{100}-(4 × 2) epilayer grown on an InP{100} surface has been studied by time-of-flight scattering and recoiling spectrometry (TOF-SARS) and low energy electron diffraction (LEED). Time-of-flight spectra of scattered neutrals plus ions were collected as a function of the crystal azimuthal angle, δ, and the beam incident angle, α, using 4keV Ne+ ions. The composition of the outermost layer was obtained from grazing incidence scattering. Experimental scattering images were used with the composition from azimuthal specific elemental accessibilities (CASEA) method to define the azimuthal directions with respect to the bulk crystallographic axes. Structural analysis was obtained from the azimuthal anisotropy of the δ-scans, from the features of the incident α-scans, and from the scattering images. These α- and δ-scans and images were simulated by means of classical ion trajectory calculations. The totality of this data is consistent with the InAs{100}-(4 × 2) surface being In-terminated and with the reconstruction being of the missing-row-dimer (MRD) type. The data show that the interatomic spacings are consistent with the coexistence of both one- and two-missing In rows in the surface. The 1st-layer In atoms are found to shift by 0.4±0.1 Å, yielding an In-In dimer spacing of 3.5±0.1 Å. Data for the InP (4 × 2) surface has been included in order to contrast the missing-row-trimer-dimer (MRTD) reconstruction model of InP with that of the MRD reconstruction model of InAs.

Original languageEnglish
Pages (from-to)161-170
Number of pages10
JournalSurface Science
Volume356
Issue number1-3
DOIs
StatePublished - 1996 Jun 10

Keywords

  • Indium arsenide
  • Indium phosphide
  • Low energy electron diffraction (LEED)
  • Low energy ion scattering (LEIS)
  • Low index single crystal surfaces
  • Semiconductor-semiconductor interfaces
  • Surface reconstruction

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