Structural properties of titanium dioxide films grown on p-Si by metal-organic chemical vapor deposition at low temperature

Y. S. Yoon, W. N. Kang, S. S. Yom, Taewhan Kim, M. Jung, T. H. Park, K. Y. Seo, Yong Lee Jong Yong Lee

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Metal-organic chemical vapor deposition of TiO2 via pyrolysis using Ti (OC3H7)4 and N2O was investigated with the goal of producing TiO2 epitaxial films on p-Si(100) substrates. X-ray diffraction analysis showed that the grown TiO2 layer was a polycrystalline film. Auger depth profiles demonstrated that the TiO2/Si interface was relatively abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the TiO2/Si interface and the formation of a polycrystalline TiO2 thin film. These results indicate that the failure to form the TiO2 epitaxial films originated from the formation of an interfacial amorphous layer at the initial growth stage.

Original languageEnglish
Pages (from-to)12-14
Number of pages3
JournalThin Solid Films
Volume238
Issue number1
DOIs
StatePublished - 1994 Jan 15

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