Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating

Chanwoo Yang, Kipyo Hong, Jaeyoung Jang, Dae Sung Chung, Tae Kyu An, Woon Seop Choi, Chan Eon Park

Research output: Contribution to journalArticle

45 Scopus citations

Abstract

We report the development of solution-processed zinc oxide (ZnO) transparent thin-film transistors (TFTs) with a poly(2-hydroxyethyl methacrylate) (PHEMA) gate dielectric on a plastic substrate. The ZnO nanorod film active layer, prepared by microwave heating, showed a highly uniform and densely packed array of large crystal size (58nm) in the [002] direction of ZnO nanorods on the plasma-treated PHEMA. The flexible ZnO TFTs with the plasma-treated PHEMA gate dielectric exhibited an electron mobility of 1.1cm2V-1s-1, which was higher by a factor of ∼8.5 than that of ZnO TFTs based on the bare PHEMA gate dielectric.

Original languageEnglish
Article number465201
JournalNanotechnology
Volume20
Issue number46
DOIs
StatePublished - 2009 Nov 6

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