Soluble-processed SiO2 gate insulator fabrication via deep UV curing for amorphous oxide transistors

Hyeonjoo Seul, Nuri On, Kijune Lee, Sangtae Kim, Jaekyeong Jeong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-temperature annealing (>300°C) required to obtain reasonable insulating properties still limits for the flexible electronics. This paper suggests that a perhydropolysilazane (PHPS) solution added VTES coupling agent can reduce the annealing temperature by using UV process.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages111-113
Number of pages3
ISBN (Electronic)9781510845510
Publication statusPublished - 2016 Jan 1
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 2016 Dec 72016 Dec 9

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume1

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period16/12/716/12/9

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Keywords

  • Low temperature
  • Metal oxide
  • Solution process
  • UV

Cite this

Seul, H., On, N., Lee, K., Kim, S., & Jeong, J. (2016). Soluble-processed SiO2 gate insulator fabrication via deep UV curing for amorphous oxide transistors. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (pp. 111-113). (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 1). Society for Information Display.