Silicon oxide film deposited at room temperatures using high-working-pressure plasma-enhanced chemical vapor deposition: Effect of O2 flow rate

Young Soo Lee, Seung Hwan Lee, Jung Dae Kwon, Ji Hoon Ahn, Jin-Seong Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O2/He plasma as the precursor and the reactant, respectively. As the O2 flow rate increased during the process, the plasma density of O2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O2 flow rate because of a compositional change in the silicon oxide films.

Original languageEnglish
Pages (from-to)10628-10631
Number of pages4
JournalCeramics International
Volume43
Issue number13
DOIs
StatePublished - 2017 Jan 1

Fingerprint

Silicon oxides
Plasma enhanced chemical vapor deposition
Oxide films
Flow rate
Plasma density
Steam
Partial pressure
Temperature
Water vapor
Plasmas
Chemical analysis

Keywords

  • A: Silicon oxide
  • B: High working pressure plasma-enhanced chemical vapor deposition
  • C: Thin films
  • D: Water permeation property

Cite this

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title = "Silicon oxide film deposited at room temperatures using high-working-pressure plasma-enhanced chemical vapor deposition: Effect of O2 flow rate",
abstract = "Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O2/He plasma as the precursor and the reactant, respectively. As the O2 flow rate increased during the process, the plasma density of O2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O2 flow rate because of a compositional change in the silicon oxide films.",
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Silicon oxide film deposited at room temperatures using high-working-pressure plasma-enhanced chemical vapor deposition : Effect of O2 flow rate. / Lee, Young Soo; Lee, Seung Hwan; Kwon, Jung Dae; Ahn, Ji Hoon; Park, Jin-Seong.

In: Ceramics International, Vol. 43, No. 13, 01.01.2017, p. 10628-10631.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Silicon oxide film deposited at room temperatures using high-working-pressure plasma-enhanced chemical vapor deposition

T2 - Effect of O2 flow rate

AU - Lee, Young Soo

AU - Lee, Seung Hwan

AU - Kwon, Jung Dae

AU - Ahn, Ji Hoon

AU - Park, Jin-Seong

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O2/He plasma as the precursor and the reactant, respectively. As the O2 flow rate increased during the process, the plasma density of O2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O2 flow rate because of a compositional change in the silicon oxide films.

AB - Silicon oxide films were deposited by high-working-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O2/He plasma as the precursor and the reactant, respectively. As the O2 flow rate increased during the process, the plasma density of O2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O2 flow rate because of a compositional change in the silicon oxide films.

KW - A: Silicon oxide

KW - B: High working pressure plasma-enhanced chemical vapor deposition

KW - C: Thin films

KW - D: Water permeation property

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U2 - 10.1016/j.ceramint.2017.05.095

DO - 10.1016/j.ceramint.2017.05.095

M3 - Article

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VL - 43

SP - 10628

EP - 10631

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

IS - 13

ER -