SiC nano-particles application to nano-floating gate memory

Dong Uk Lee, Tae Hee Lee, Eun Kyu Kim, Jin Wook Shin, Won Ju Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Nonvolatile memory device with the multi-layered SiC nano-particles embedded in SiO2 dielectrics for long-term data storage was fabricated and its electrical properties were evaluated. The SiC nano-particles were formed by using radio-frequency magnetron sputtering in the argon ambient and post thermal annealing process of SiC film. High-resolution transmission electron microscope analysis showed the multi-layer of SiC nano-particles between tunnel oxide and control oxide layers. The average size and density of the SiC nano-particles were approximately 5 nm and 2×1012 cm-2, respectively. The memory window of nonvolatile memory devices with the multi-layer of SiC nano-particles to define programming and erasing state were about 2.7 V during the operations at ±10 V for 700 ms, and then it was maintained around at 1.1 V after 105 sec.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages509-510
Number of pages2
DOIs
StatePublished - 2009 Dec 1
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 2008 Jul 272008 Aug 1

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
CountryBrazil
CityRio de Janeiro
Period08/07/2708/08/1

Fingerprint

floating
oxides
data storage
programming
tunnels
radio frequencies
magnetron sputtering
electron microscopes
electrical properties
argon
annealing
high resolution

Cite this

Lee, D. U., Lee, T. H., Kim, E. K., Shin, J. W., & Cho, W. J. (2009). SiC nano-particles application to nano-floating gate memory. In Physics of Semiconductors - 29th International Conference, ICPS 29 (pp. 509-510). (AIP Conference Proceedings; Vol. 1199). https://doi.org/10.1063/1.3295531
Lee, Dong Uk ; Lee, Tae Hee ; Kim, Eun Kyu ; Shin, Jin Wook ; Cho, Won Ju. / SiC nano-particles application to nano-floating gate memory. Physics of Semiconductors - 29th International Conference, ICPS 29. 2009. pp. 509-510 (AIP Conference Proceedings).
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Lee, DU, Lee, TH, Kim, EK, Shin, JW & Cho, WJ 2009, SiC nano-particles application to nano-floating gate memory. in Physics of Semiconductors - 29th International Conference, ICPS 29. AIP Conference Proceedings, vol. 1199, pp. 509-510, 29th International Conference on Physics of Semiconductors, ICPS 29, Rio de Janeiro, Brazil, 08/07/27. https://doi.org/10.1063/1.3295531

SiC nano-particles application to nano-floating gate memory. / Lee, Dong Uk; Lee, Tae Hee; Kim, Eun Kyu; Shin, Jin Wook; Cho, Won Ju.

Physics of Semiconductors - 29th International Conference, ICPS 29. 2009. p. 509-510 (AIP Conference Proceedings; Vol. 1199).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee DU, Lee TH, Kim EK, Shin JW, Cho WJ. SiC nano-particles application to nano-floating gate memory. In Physics of Semiconductors - 29th International Conference, ICPS 29. 2009. p. 509-510. (AIP Conference Proceedings). https://doi.org/10.1063/1.3295531