Self limited and selective oxidation of aluminum in magnetic tunnel junctions using a source of atomic oxygen

K. Ounadjela, G. Van der Leeden, D. K. Kim, J. E. Nunez-Regueiro, S. McAllister, D. Heimanson, Young Keun Kim, Hee Kyung, Chang Kyung Kim

Research output: Contribution to journalArticle

Abstract

An attempt was made to fabricate tunnel junctions for which the oxidation of the metallic Al is self-limited and selective. It was demonstrated that oxidation using an atomic source of oxygen is rapid and self-limiting and allows formation of very stable AlOx film.

Original languageEnglish
Pages (from-to)GB-9
JournalDigests of the Intermag Conference
DOIs
StatePublished - 2000 Jan 1

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    Ounadjela, K., Van der Leeden, G., Kim, D. K., Nunez-Regueiro, J. E., McAllister, S., Heimanson, D., Kim, Y. K., Kyung, H., & Kim, C. K. (2000). Self limited and selective oxidation of aluminum in magnetic tunnel junctions using a source of atomic oxygen. Digests of the Intermag Conference, GB-9. https://doi.org/10.1109/INTMAG.2000.872284