Selective growth of metallic and semiconducting single walled carbon nanotubes on textured silicon

Mira Jang, Jongtaek Lee, Teahee Park, Junyoung Lee, Jonghee Yang, Whikun Yi

Research output: Contribution to journalArticle

Abstract

We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

Original languageEnglish
Pages (from-to)2992-2995
Number of pages4
JournalJournal of nanoscience and nanotechnology
Volume16
Issue number3
DOIs
StatePublished - 2016 Mar 1

Fingerprint

Silicon
Single-walled carbon nanotubes (SWCN)
carbon nanotubes
silicon
Substrates
Texturing
Electronic properties
Raman spectroscopy
Chemical vapor deposition
Etching
Atomic force microscopy
Optical properties
etching
vapor deposition
atomic force microscopy
wafers
optical properties
conduction
Scanning electron microscopy
scanning electron microscopy

Keywords

  • Metallic SWNTs
  • Selective growth
  • Semiconducting SWNTs
  • Textured Si substrate

Cite this

Jang, Mira ; Lee, Jongtaek ; Park, Teahee ; Lee, Junyoung ; Yang, Jonghee ; Yi, Whikun. / Selective growth of metallic and semiconducting single walled carbon nanotubes on textured silicon. In: Journal of nanoscience and nanotechnology. 2016 ; Vol. 16, No. 3. pp. 2992-2995.
@article{76b3249d1ff94b8fb984a6ded91313c9,
title = "Selective growth of metallic and semiconducting single walled carbon nanotubes on textured silicon",
abstract = "We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.",
keywords = "Metallic SWNTs, Selective growth, Semiconducting SWNTs, Textured Si substrate",
author = "Mira Jang and Jongtaek Lee and Teahee Park and Junyoung Lee and Jonghee Yang and Whikun Yi",
year = "2016",
month = "3",
day = "1",
doi = "10.1166/jnn.2016.11087",
language = "English",
volume = "16",
pages = "2992--2995",
journal = "Journal of nanoscience and nanotechnology",
issn = "1533-4880",
number = "3",

}

Selective growth of metallic and semiconducting single walled carbon nanotubes on textured silicon. / Jang, Mira; Lee, Jongtaek; Park, Teahee; Lee, Junyoung; Yang, Jonghee; Yi, Whikun.

In: Journal of nanoscience and nanotechnology, Vol. 16, No. 3, 01.03.2016, p. 2992-2995.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Selective growth of metallic and semiconducting single walled carbon nanotubes on textured silicon

AU - Jang, Mira

AU - Lee, Jongtaek

AU - Park, Teahee

AU - Lee, Junyoung

AU - Yang, Jonghee

AU - Yi, Whikun

PY - 2016/3/1

Y1 - 2016/3/1

N2 - We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

AB - We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

KW - Metallic SWNTs

KW - Selective growth

KW - Semiconducting SWNTs

KW - Textured Si substrate

UR - http://www.scopus.com/inward/record.url?scp=84960380550&partnerID=8YFLogxK

U2 - 10.1166/jnn.2016.11087

DO - 10.1166/jnn.2016.11087

M3 - Article

C2 - 27455748

AN - SCOPUS:84960380550

VL - 16

SP - 2992

EP - 2995

JO - Journal of nanoscience and nanotechnology

JF - Journal of nanoscience and nanotechnology

SN - 1533-4880

IS - 3

ER -