Ruthenium based metals using atomic vapor deposition for gate electrode applications

Changhwan Choi, Takashi Ando, Vijay Narayanan

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The impacts of ruthenium-based metal gate electrodes (Ru, RuOx, RuSiOx) with atomic vapor deposition (AVD) on flatband voltage (VFB) and equivalent oxide thickness (EOT) are demonstrated using a low temperature (<400 °C) process. Increasing thickness of Ru and RuOx exhibits higher VFB, attributed to filling oxygen vacancies [Vo] in high- k gate dielectric with oxygen supplied from AVD metal gate electrodes upon annealing. Ru is efficient to attain a higher work-function and thinner EOT compared to RuOx and RuSiOx. Subsequent physical-vapor-deposition (PVD) TiN capping on AVD metals blocks oxygen out-diffusion, leading to higher VFB than PVD W or AVD TiN capping.

Original languageEnglish
Article number083506
JournalApplied Physics Letters
Volume98
Issue number8
DOIs
StatePublished - 2011 Feb 21

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ruthenium
vapor deposition
electrodes
metals
oxygen
oxides
annealing
electric potential

Cite this

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Ruthenium based metals using atomic vapor deposition for gate electrode applications. / Choi, Changhwan; Ando, Takashi; Narayanan, Vijay.

In: Applied Physics Letters, Vol. 98, No. 8, 083506, 21.02.2011.

Research output: Contribution to journalArticle

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