Reversible conductance switching characteristics in a polymer-In 2 O 3 nanocrystals junction

Jongmin Kim, Dong Uk Lee, Yongcheol Jo, J. Han, H. S. Kim, A. I. Inamdar, W. Jung, Hyunsik Im, Eun Kyu Kim

Research output: Contribution to journalArticle

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Abstract

A transparent polymer-based resistive switching device containing In 2 O 3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In 2 O 3 NCs interface. The RESET and SET switching times (τ RESET and τ SET ), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τ RESET ∼ 550 nsec and τ SET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In 2 O 3 NCs boundaries plays a key role in determining resistive switching properties.

Original languageEnglish
Article number067127
JournalAIP Advances
Volume4
Issue number6
DOIs
StatePublished - 2014 Jan 1

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nanocrystals
polymers
oxygen ions
pulse duration
counters
slopes
temperature dependence

Cite this

Kim, Jongmin ; Lee, Dong Uk ; Jo, Yongcheol ; Han, J. ; Kim, H. S. ; Inamdar, A. I. ; Jung, W. ; Im, Hyunsik ; Kim, Eun Kyu. / Reversible conductance switching characteristics in a polymer-In 2 O 3 nanocrystals junction In: AIP Advances. 2014 ; Vol. 4, No. 6.
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abstract = "A transparent polymer-based resistive switching device containing In 2 O 3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In 2 O 3 NCs interface. The RESET and SET switching times (τ RESET and τ SET ), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τ RESET ∼ 550 nsec and τ SET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In 2 O 3 NCs boundaries plays a key role in determining resistive switching properties.",
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Kim, J, Lee, DU, Jo, Y, Han, J, Kim, HS, Inamdar, AI, Jung, W, Im, H & Kim, EK 2014, ' Reversible conductance switching characteristics in a polymer-In 2 O 3 nanocrystals junction ', AIP Advances, vol. 4, no. 6, 067127. https://doi.org/10.1063/1.4884303

Reversible conductance switching characteristics in a polymer-In 2 O 3 nanocrystals junction . / Kim, Jongmin; Lee, Dong Uk; Jo, Yongcheol; Han, J.; Kim, H. S.; Inamdar, A. I.; Jung, W.; Im, Hyunsik; Kim, Eun Kyu.

In: AIP Advances, Vol. 4, No. 6, 067127, 01.01.2014.

Research output: Contribution to journalArticle

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AU - Kim, Jongmin

AU - Lee, Dong Uk

AU - Jo, Yongcheol

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AU - Kim, H. S.

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AU - Jung, W.

AU - Im, Hyunsik

AU - Kim, Eun Kyu

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AB - A transparent polymer-based resistive switching device containing In 2 O 3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In 2 O 3 NCs interface. The RESET and SET switching times (τ RESET and τ SET ), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τ RESET ∼ 550 nsec and τ SET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In 2 O 3 NCs boundaries plays a key role in determining resistive switching properties.

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