Retention characteristics of gate-all-around metal-oxide-nitride-oxide-semiconductor devices for the trap energy level dependence at elevated temperature

Hyung Jun Yang, Gae Hun Lee, Yun Heub Song

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Abstract

We present an investigation of the retention characteristics of three-dimensional (3D) gate-all-around metal-oxide-nitride-oxide-semiconductor (GAA-MONOS) devices. The effect of retention charge loss in 3D GAA-MONOS devices at elevated temperatures has been experimented and studied by technology computer-aided design (TCAD) simulation. In particular, we considered the dependence of the trap energy level in the silicon nitride layer on the retention characteristics of the 3D GAA-MONOS devices by TCAD simulation. Here, simulation results showed that acceptor trap energy level considerably affects the retention charge loss compared with donor trap energy level in the silicon nitride layer that has a Gaussian trap distribution. Moreover, as the acceptor trap energy level becomes shallower, the effect on retention charge loss increases with increasing temperature. From these results, we confirmed that the simulation results for the retention characteristics of 3D GAA-MONOS devices were in reasonable agreement with the experimental results.

Original languageEnglish
Article number104301
JournalJapanese Journal of Applied Physics
Volume53
Issue number10
DOIs
StatePublished - 2014 Jan 1

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Semiconductor devices
semiconductor devices
Nitrides
Electron energy levels
nitrides
metal oxides
energy levels
traps
Oxides
oxides
Metals
Silicon nitride
Computer aided design
computer aided design
silicon nitrides
Temperature
temperature
simulation
Oxide semiconductors

Cite this

@article{382ef82a85494e0abd607be21894c8c1,
title = "Retention characteristics of gate-all-around metal-oxide-nitride-oxide-semiconductor devices for the trap energy level dependence at elevated temperature",
abstract = "We present an investigation of the retention characteristics of three-dimensional (3D) gate-all-around metal-oxide-nitride-oxide-semiconductor (GAA-MONOS) devices. The effect of retention charge loss in 3D GAA-MONOS devices at elevated temperatures has been experimented and studied by technology computer-aided design (TCAD) simulation. In particular, we considered the dependence of the trap energy level in the silicon nitride layer on the retention characteristics of the 3D GAA-MONOS devices by TCAD simulation. Here, simulation results showed that acceptor trap energy level considerably affects the retention charge loss compared with donor trap energy level in the silicon nitride layer that has a Gaussian trap distribution. Moreover, as the acceptor trap energy level becomes shallower, the effect on retention charge loss increases with increasing temperature. From these results, we confirmed that the simulation results for the retention characteristics of 3D GAA-MONOS devices were in reasonable agreement with the experimental results.",
author = "Yang, {Hyung Jun} and Lee, {Gae Hun} and Song, {Yun Heub}",
year = "2014",
month = "1",
day = "1",
doi = "10.7567/JJAP.53.104301",
language = "English",
volume = "53",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",
issn = "0021-4922",
number = "10",

}

TY - JOUR

T1 - Retention characteristics of gate-all-around metal-oxide-nitride-oxide-semiconductor devices for the trap energy level dependence at elevated temperature

AU - Yang, Hyung Jun

AU - Lee, Gae Hun

AU - Song, Yun Heub

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We present an investigation of the retention characteristics of three-dimensional (3D) gate-all-around metal-oxide-nitride-oxide-semiconductor (GAA-MONOS) devices. The effect of retention charge loss in 3D GAA-MONOS devices at elevated temperatures has been experimented and studied by technology computer-aided design (TCAD) simulation. In particular, we considered the dependence of the trap energy level in the silicon nitride layer on the retention characteristics of the 3D GAA-MONOS devices by TCAD simulation. Here, simulation results showed that acceptor trap energy level considerably affects the retention charge loss compared with donor trap energy level in the silicon nitride layer that has a Gaussian trap distribution. Moreover, as the acceptor trap energy level becomes shallower, the effect on retention charge loss increases with increasing temperature. From these results, we confirmed that the simulation results for the retention characteristics of 3D GAA-MONOS devices were in reasonable agreement with the experimental results.

AB - We present an investigation of the retention characteristics of three-dimensional (3D) gate-all-around metal-oxide-nitride-oxide-semiconductor (GAA-MONOS) devices. The effect of retention charge loss in 3D GAA-MONOS devices at elevated temperatures has been experimented and studied by technology computer-aided design (TCAD) simulation. In particular, we considered the dependence of the trap energy level in the silicon nitride layer on the retention characteristics of the 3D GAA-MONOS devices by TCAD simulation. Here, simulation results showed that acceptor trap energy level considerably affects the retention charge loss compared with donor trap energy level in the silicon nitride layer that has a Gaussian trap distribution. Moreover, as the acceptor trap energy level becomes shallower, the effect on retention charge loss increases with increasing temperature. From these results, we confirmed that the simulation results for the retention characteristics of 3D GAA-MONOS devices were in reasonable agreement with the experimental results.

UR - http://www.scopus.com/inward/record.url?scp=84910093716&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.104301

DO - 10.7567/JJAP.53.104301

M3 - Article

AN - SCOPUS:84910093716

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

SN - 0021-4922

IS - 10

M1 - 104301

ER -