Resistive switching in a Pt/TiO2/Pt thin film stack - a candidate for a non-volatile ReRAM

Herbert Schroeder, Doo Seok Jeong

Research output: Contribution to journalArticle

63 Scopus citations

Abstract

In Pt/27 nm thick TiO2/Pt stacks bipolar and unipolar resistive switching (BRS, URS) behavior of were investigated. Depending on the current compliance during electroforming process, BRS or URS could be observed: With a lower current compliance (<0.1mA) asymmetric current-voltage (I-V) curves (BRS) were measured in the voltage range -1.6V to +1.1V, while with a higher current compliance (1 to 10mA) the URS behavior was observed. Furthermore, the permanent transition from BRS to URS was investigated by applying voltage with a higher current compliance (∼3 mA). Preliminary results of microstructural investigations show heavily damaged regions in the stacks.

Original languageEnglish
Pages (from-to)1982-1985
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
StatePublished - 2007 Sep 1

Keywords

  • Bipolar RS
  • Non-volatile ReRAM
  • Pt/TiO/Pt stacks
  • Resistive switching (RS)
  • Unipolar RS

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