Removal of Cu contaminants from Si surfaces using dry cleaning techniques

Chongmu Lee, M. G. Park, Hyeongtag Jeon, T. H. Ahn

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Removal of Cu contaminants from Si wafer surfaces was tried using remote hydrogen plasma (RHP) and UV/O 3 cleaning techniques were contaminated using 1 ppm CuCb standard chemical solution the amount of Cu impurities was monitored by TXRF (total reflection x-ray fluorescence) and XPS (x-ray photoelectron spectroscopy). Our results show that metal impurities including Cu can be effectively removed by a hydrogen plasma or UV/O 3 cleaning technique, if only it is performed under optimal process conditions. A two step cleaning process composed of remote H plasma cleaning, first and UV/O 3 cleaning, next has been found to be more effective than a single step process composed of only a remote H plasma or UV/O 3 cleaning and a two step cleaning process composed of UV/O 3 cleaning, first and remote H plasma cleaning, next. It appeared that cleaning efficiency was degraded with increasing the number of repetition of the cleaning process. The optimal process parameters for the remote H plasma cleaning are the rf power of 20 W and the exposure time of 5 min. The optimal exposure time of the UV/O 3 cleaning for Cu impurity removal is 1 min. Cleaning efficiency is degraded with increasing the process parameters above the optimal values for both RHP and UV/O 3 cleaning techniques.

Original languageEnglish
Pages (from-to)S292-S296
JournalJournal of the Korean Physical Society
Volume30
Issue numberSUPPL. PART 1
StatePublished - 1997 Dec 1

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cleaning
contaminants
hydrogen plasma
impurities
x ray fluorescence
x ray spectroscopy
repetition
photoelectron spectroscopy
wafers

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Lee, Chongmu ; Park, M. G. ; Jeon, Hyeongtag ; Ahn, T. H. / Removal of Cu contaminants from Si surfaces using dry cleaning techniques. In: Journal of the Korean Physical Society. 1997 ; Vol. 30, No. SUPPL. PART 1. pp. S292-S296.
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Lee, C, Park, MG, Jeon, H & Ahn, TH 1997, 'Removal of Cu contaminants from Si surfaces using dry cleaning techniques', Journal of the Korean Physical Society, vol. 30, no. SUPPL. PART 1, pp. S292-S296.

Removal of Cu contaminants from Si surfaces using dry cleaning techniques. / Lee, Chongmu; Park, M. G.; Jeon, Hyeongtag; Ahn, T. H.

In: Journal of the Korean Physical Society, Vol. 30, No. SUPPL. PART 1, 01.12.1997, p. S292-S296.

Research output: Contribution to journalArticle

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