Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET

Jea Gun Park, Tae Hun Shim, Gon Sub Lee, Won Ju Cho, Chang Geun Ahn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical chracteristics of both strained Si and conventional SOI n-MOSFETs was investigated. We demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributted to the supression of channel surface roughness owing to post-RTA.

Original languageEnglish
Title of host publication2006 IEEE international SOI Conference Proceedings
Pages47-48
Number of pages2
DOIs
StatePublished - 2007 Dec 1
Event2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States
Duration: 2006 Oct 22006 Oct 5

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2006 IEEE International Silicon on Insulator Conference, SOI
CountryUnited States
CityNiagara Falls, NY
Period06/10/206/10/5

Fingerprint

Rapid thermal annealing
Surface roughness
Heat treatment
Annealing

Cite this

Park, J. G., Shim, T. H., Lee, G. S., Cho, W. J., & Ahn, C. G. (2007). Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET. In 2006 IEEE international SOI Conference Proceedings (pp. 47-48). [4062874] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2006.284426
Park, Jea Gun ; Shim, Tae Hun ; Lee, Gon Sub ; Cho, Won Ju ; Ahn, Chang Geun. / Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET. 2006 IEEE international SOI Conference Proceedings. 2007. pp. 47-48 (Proceedings - IEEE International SOI Conference).
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abstract = "The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical chracteristics of both strained Si and conventional SOI n-MOSFETs was investigated. We demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributted to the supression of channel surface roughness owing to post-RTA.",
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Park, JG, Shim, TH, Lee, GS, Cho, WJ & Ahn, CG 2007, Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET. in 2006 IEEE international SOI Conference Proceedings., 4062874, Proceedings - IEEE International SOI Conference, pp. 47-48, 2006 IEEE International Silicon on Insulator Conference, SOI, Niagara Falls, NY, United States, 06/10/2. https://doi.org/10.1109/SOI.2006.284426

Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET. / Park, Jea Gun; Shim, Tae Hun; Lee, Gon Sub; Cho, Won Ju; Ahn, Chang Geun.

2006 IEEE international SOI Conference Proceedings. 2007. p. 47-48 4062874 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical chracteristics of both strained Si and conventional SOI n-MOSFETs was investigated. We demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributted to the supression of channel surface roughness owing to post-RTA.

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Park JG, Shim TH, Lee GS, Cho WJ, Ahn CG. Post-RTA effect on electrical characteristics of nano-scale strained Si grown on SiGe-on-insulator n-MOSFET. In 2006 IEEE international SOI Conference Proceedings. 2007. p. 47-48. 4062874. (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2006.284426