Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm

C. J. Choi, M. G. Jang, Y. Y. Kim, M. S. Jun, T. Y. Kim, S. J. Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The electrical and structural properties of platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors with physical gate lengths scaled down to 20nm have been investigated. Constant built-in potential clipped at source/drain contacts for shorter channel length is responsible for negative shift of threshold voltage with decreasing gate length.

Original languageEnglish
Pages (from-to)159-160
Number of pages2
JournalElectronics Letters
Volume44
Issue number2
DOIs
StatePublished - 2008 Feb 4

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MOSFET devices
Threshold voltage
Structural properties
Platinum
Electric properties

Cite this

Choi, C. J. ; Jang, M. G. ; Kim, Y. Y. ; Jun, M. S. ; Kim, T. Y. ; Lee, S. J. / Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm. In: Electronics Letters. 2008 ; Vol. 44, No. 2. pp. 159-160.
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Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm. / Choi, C. J.; Jang, M. G.; Kim, Y. Y.; Jun, M. S.; Kim, T. Y.; Lee, S. J.

In: Electronics Letters, Vol. 44, No. 2, 04.02.2008, p. 159-160.

Research output: Contribution to journalArticle

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AU - Choi, C. J.

AU - Jang, M. G.

AU - Kim, Y. Y.

AU - Jun, M. S.

AU - Kim, T. Y.

AU - Lee, S. J.

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AB - The electrical and structural properties of platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors with physical gate lengths scaled down to 20nm have been investigated. Constant built-in potential clipped at source/drain contacts for shorter channel length is responsible for negative shift of threshold voltage with decreasing gate length.

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