Plasma etching for the application to low-k dielectrics devices

J. W. Lee, Hyoun Woo Kim, J. W. Han, M. S. Kim, B. D. Yoo, M. H. Kim, C. H. Lee, C. H. Lee, C. H. Lim, S. K. Hwang, C. Lee, D. J. Chung, S. G. Park, S. G. Lee, B. H. O, J. Kim, S. P. Chang, S. H. Lee, S. Y. Chai, W. I. LeeS. E. Park, K. Kim, D. K. Choi, ChinWook Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N 2 /O 2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.

Original languageEnglish
Title of host publicationResearch Trends in Contemporary Materials Science - YUCOMAT VIII - Selected papers presented at the 8th Conference of the Yugoslav Materials Research Society
Pages113-118
Number of pages6
StatePublished - 2007 Dec 1
Event8th Conference of the Yugoslav Materials Research Society - Herceg Novi, Serbia
Duration: 2006 Sep 42006 Sep 8

Publication series

NameMaterials Science Forum
Volume555
ISSN (Print)0255-5476

Other

Other8th Conference of the Yugoslav Materials Research Society
CountrySerbia
CityHerceg Novi
Period06/09/406/09/8

Fingerprint

Dielectric devices
Plasma etching
plasma etching
Etching
etching
Photoresists
photoresists
damage
Inductively coupled plasma
dipping
Fourier transform infrared spectroscopy
gas flow
Flow of gases
Ferrite
ferrites
infrared spectroscopy
Low-k dielectric

Keywords

  • ICP
  • Low-k material
  • Photoresist

Cite this

Lee, J. W., Kim, H. W., Han, J. W., Kim, M. S., Yoo, B. D., Kim, M. H., ... Chung, C. (2007). Plasma etching for the application to low-k dielectrics devices. In Research Trends in Contemporary Materials Science - YUCOMAT VIII - Selected papers presented at the 8th Conference of the Yugoslav Materials Research Society (pp. 113-118). (Materials Science Forum; Vol. 555).
Lee, J. W. ; Kim, Hyoun Woo ; Han, J. W. ; Kim, M. S. ; Yoo, B. D. ; Kim, M. H. ; Lee, C. H. ; Lee, C. H. ; Lim, C. H. ; Hwang, S. K. ; Lee, C. ; Chung, D. J. ; Park, S. G. ; Lee, S. G. ; O, B. H. ; Kim, J. ; Chang, S. P. ; Lee, S. H. ; Chai, S. Y. ; Lee, W. I. ; Park, S. E. ; Kim, K. ; Choi, D. K. ; Chung, ChinWook. / Plasma etching for the application to low-k dielectrics devices. Research Trends in Contemporary Materials Science - YUCOMAT VIII - Selected papers presented at the 8th Conference of the Yugoslav Materials Research Society. 2007. pp. 113-118 (Materials Science Forum).
@inproceedings{eee65c514efc42c5a8641005c7821592,
title = "Plasma etching for the application to low-k dielectrics devices",
abstract = "We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N 2 /O 2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.",
keywords = "ICP, Low-k material, Photoresist",
author = "Lee, {J. W.} and Kim, {Hyoun Woo} and Han, {J. W.} and Kim, {M. S.} and Yoo, {B. D.} and Kim, {M. H.} and Lee, {C. H.} and Lee, {C. H.} and Lim, {C. H.} and Hwang, {S. K.} and C. Lee and Chung, {D. J.} and Park, {S. G.} and Lee, {S. G.} and O, {B. H.} and J. Kim and Chang, {S. P.} and Lee, {S. H.} and Chai, {S. Y.} and Lee, {W. I.} and Park, {S. E.} and K. Kim and Choi, {D. K.} and ChinWook Chung",
year = "2007",
month = "12",
day = "1",
language = "English",
isbn = "0878494413",
series = "Materials Science Forum",
pages = "113--118",
booktitle = "Research Trends in Contemporary Materials Science - YUCOMAT VIII - Selected papers presented at the 8th Conference of the Yugoslav Materials Research Society",

}

Lee, JW, Kim, HW, Han, JW, Kim, MS, Yoo, BD, Kim, MH, Lee, CH, Lee, CH, Lim, CH, Hwang, SK, Lee, C, Chung, DJ, Park, SG, Lee, SG, O, BH, Kim, J, Chang, SP, Lee, SH, Chai, SY, Lee, WI, Park, SE, Kim, K, Choi, DK & Chung, C 2007, Plasma etching for the application to low-k dielectrics devices. in Research Trends in Contemporary Materials Science - YUCOMAT VIII - Selected papers presented at the 8th Conference of the Yugoslav Materials Research Society. Materials Science Forum, vol. 555, pp. 113-118, 8th Conference of the Yugoslav Materials Research Society, Herceg Novi, Serbia, 06/09/4.

Plasma etching for the application to low-k dielectrics devices. / Lee, J. W.; Kim, Hyoun Woo; Han, J. W.; Kim, M. S.; Yoo, B. D.; Kim, M. H.; Lee, C. H.; Lee, C. H.; Lim, C. H.; Hwang, S. K.; Lee, C.; Chung, D. J.; Park, S. G.; Lee, S. G.; O, B. H.; Kim, J.; Chang, S. P.; Lee, S. H.; Chai, S. Y.; Lee, W. I.; Park, S. E.; Kim, K.; Choi, D. K.; Chung, ChinWook.

Research Trends in Contemporary Materials Science - YUCOMAT VIII - Selected papers presented at the 8th Conference of the Yugoslav Materials Research Society. 2007. p. 113-118 (Materials Science Forum; Vol. 555).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Plasma etching for the application to low-k dielectrics devices

AU - Lee, J. W.

AU - Kim, Hyoun Woo

AU - Han, J. W.

AU - Kim, M. S.

AU - Yoo, B. D.

AU - Kim, M. H.

AU - Lee, C. H.

AU - Lee, C. H.

AU - Lim, C. H.

AU - Hwang, S. K.

AU - Lee, C.

AU - Chung, D. J.

AU - Park, S. G.

AU - Lee, S. G.

AU - O, B. H.

AU - Kim, J.

AU - Chang, S. P.

AU - Lee, S. H.

AU - Chai, S. Y.

AU - Lee, W. I.

AU - Park, S. E.

AU - Kim, K.

AU - Choi, D. K.

AU - Chung, ChinWook

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N 2 /O 2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.

AB - We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N 2 /O 2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.

KW - ICP

KW - Low-k material

KW - Photoresist

UR - http://www.scopus.com/inward/record.url?scp=39049167212&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:39049167212

SN - 0878494413

SN - 9780878494415

T3 - Materials Science Forum

SP - 113

EP - 118

BT - Research Trends in Contemporary Materials Science - YUCOMAT VIII - Selected papers presented at the 8th Conference of the Yugoslav Materials Research Society

ER -

Lee JW, Kim HW, Han JW, Kim MS, Yoo BD, Kim MH et al. Plasma etching for the application to low-k dielectrics devices. In Research Trends in Contemporary Materials Science - YUCOMAT VIII - Selected papers presented at the 8th Conference of the Yugoslav Materials Research Society. 2007. p. 113-118. (Materials Science Forum).