Pixel-level digital-to-analog conversion scheme for compact data drivers of active matrix organic light-emitting diodes with low-temperature polycrystalline silicon thin-film transistors

Tae Wook Kim, Byongdeok Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1 : 3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 μm, which is almost one-half of that of the previous 6-bit resistor-string-based DAC.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume49
Issue number3 PART 2
DOIs
StatePublished - 2010 Mar 1

Fingerprint

Organic light emitting diodes (OLED)
Thin film transistors
Digital to analog conversion
Polysilicon
transistors
light emitting diodes
Pixels
pixels
analogs
silicon
matrices
thin films
Temperature
format
Demultiplexing
demultiplexing
resistors
Resistors
Networks (circuits)
strings

Cite this

@article{29d78c928b3d4de59f03e8b60f701a1c,
title = "Pixel-level digital-to-analog conversion scheme for compact data drivers of active matrix organic light-emitting diodes with low-temperature polycrystalline silicon thin-film transistors",
abstract = "This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1 : 3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 μm, which is almost one-half of that of the previous 6-bit resistor-string-based DAC.",
author = "Kim, {Tae Wook} and Byongdeok Choi",
year = "2010",
month = "3",
day = "1",
doi = "10.1143/JJAP.49.03CD03",
language = "English",
volume = "49",
journal = "Japanese journal of applied physics",
issn = "0021-4922",
number = "3 PART 2",

}

TY - JOUR

T1 - Pixel-level digital-to-analog conversion scheme for compact data drivers of active matrix organic light-emitting diodes with low-temperature polycrystalline silicon thin-film transistors

AU - Kim, Tae Wook

AU - Choi, Byongdeok

PY - 2010/3/1

Y1 - 2010/3/1

N2 - This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1 : 3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 μm, which is almost one-half of that of the previous 6-bit resistor-string-based DAC.

AB - This paper shows that a part of a digital-to-analog conversion (DAC) function can be included in a pixel circuit to save the circuit area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). Because the pixel-level DAC can be constructed by two TFTs and one small capacitor, the pixel circuit does not become markedly complex. The design of an 8-bit DAC, which combines a 6-bit resistor-string-based DAC and a 2-bit pixel-level DAC for a 4-in. diagonal VGA format active matrix organic light-emitting diode (AMOLED), is shown in detail. In addition, analysis results are presented, revealing that the 8-bit DAC scheme including a 2-bit pixel-level DAC with 1 : 3 demultiplexing can be applied to very high video formats, such as XGA, for a 3 to 4-in. diagonal AMOLED. Even for a 9- to 12-in. diagonal AMOLED, the proposed scheme can still be applied to the XGA format, even though no demultiplexing is allowed. The total height of the proposed 8-bit DAC is approximately 960 μm, which is almost one-half of that of the previous 6-bit resistor-string-based DAC.

UR - http://www.scopus.com/inward/record.url?scp=77952574590&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.03CD03

DO - 10.1143/JJAP.49.03CD03

M3 - Article

AN - SCOPUS:77952574590

VL - 49

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

SN - 0021-4922

IS - 3 PART 2

ER -