Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption

Yuriy Vashpanov, Jae Il Jung, Kae dal Kwack

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.

Original languageEnglish
Pages (from-to)1321-1327
Number of pages7
JournalSensors
Volume11
Issue number2
DOIs
StatePublished - 2011 Feb 1

Keywords

  • Gas sensors
  • Heterojunction
  • Photo-EMF
  • Porous silicon

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