Performance of magnetic tunnel junctions prepared by combined natural and remote oxidation methods for the application of magnetic random access memory

K. S. Yoon, J. Y. Yang, W. J. Choi, Y. D. Kim, C. O. Kim, Jin Pyo Hong

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

A combined natural and remote oxidation method for insulating AlOx barriers was carried out to effectively enhance electrical and structural properties of magnetic tunnel junctions (MTJ). This combined process was intentionally taken to reduce the oxidation time and to increase reactive oxygen concentration at high power operation. Experimental results indicated that the electrical breakdown voltage and magnetoresistance of the MTJ were increased from 0.8 V to 1.1 V and about 21 %, respectively. In addition, the bias voltage dependence of magnetoresistance was improved up to 400 mV at a half e level of initial magnetoresistance value due to the structural enhancement.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume42
Issue numberSPEC.
StatePublished - 2003 Feb 1
EventProceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of
Duration: 2002 Aug 202002 Aug 23

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random access memory
tunnel junctions
oxidation
electric potential
electrical faults
electrical properties
augmentation
oxygen

Keywords

  • MRAM
  • MTJ
  • Remote oxidation

Cite this

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title = "Performance of magnetic tunnel junctions prepared by combined natural and remote oxidation methods for the application of magnetic random access memory",
abstract = "A combined natural and remote oxidation method for insulating AlOx barriers was carried out to effectively enhance electrical and structural properties of magnetic tunnel junctions (MTJ). This combined process was intentionally taken to reduce the oxidation time and to increase reactive oxygen concentration at high power operation. Experimental results indicated that the electrical breakdown voltage and magnetoresistance of the MTJ were increased from 0.8 V to 1.1 V and about 21 {\%}, respectively. In addition, the bias voltage dependence of magnetoresistance was improved up to 400 mV at a half e level of initial magnetoresistance value due to the structural enhancement.",
keywords = "MRAM, MTJ, Remote oxidation",
author = "Yoon, {K. S.} and Yang, {J. Y.} and Choi, {W. J.} and Kim, {Y. D.} and Kim, {C. O.} and Hong, {Jin Pyo}",
year = "2003",
month = "2",
day = "1",
language = "English",
volume = "42",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
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Performance of magnetic tunnel junctions prepared by combined natural and remote oxidation methods for the application of magnetic random access memory. / Yoon, K. S.; Yang, J. Y.; Choi, W. J.; Kim, Y. D.; Kim, C. O.; Hong, Jin Pyo.

In: Journal of the Korean Physical Society, Vol. 42, No. SPEC., 01.02.2003.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Performance of magnetic tunnel junctions prepared by combined natural and remote oxidation methods for the application of magnetic random access memory

AU - Yoon, K. S.

AU - Yang, J. Y.

AU - Choi, W. J.

AU - Kim, Y. D.

AU - Kim, C. O.

AU - Hong, Jin Pyo

PY - 2003/2/1

Y1 - 2003/2/1

N2 - A combined natural and remote oxidation method for insulating AlOx barriers was carried out to effectively enhance electrical and structural properties of magnetic tunnel junctions (MTJ). This combined process was intentionally taken to reduce the oxidation time and to increase reactive oxygen concentration at high power operation. Experimental results indicated that the electrical breakdown voltage and magnetoresistance of the MTJ were increased from 0.8 V to 1.1 V and about 21 %, respectively. In addition, the bias voltage dependence of magnetoresistance was improved up to 400 mV at a half e level of initial magnetoresistance value due to the structural enhancement.

AB - A combined natural and remote oxidation method for insulating AlOx barriers was carried out to effectively enhance electrical and structural properties of magnetic tunnel junctions (MTJ). This combined process was intentionally taken to reduce the oxidation time and to increase reactive oxygen concentration at high power operation. Experimental results indicated that the electrical breakdown voltage and magnetoresistance of the MTJ were increased from 0.8 V to 1.1 V and about 21 %, respectively. In addition, the bias voltage dependence of magnetoresistance was improved up to 400 mV at a half e level of initial magnetoresistance value due to the structural enhancement.

KW - MRAM

KW - MTJ

KW - Remote oxidation

UR - http://www.scopus.com/inward/record.url?scp=0037307625&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037307625

VL - 42

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SPEC.

ER -