Performance modulation of transparent ALD indium oxide films on flexible substrates: Transition between metal-like conductor and high performance semiconductor states

Jiazhen Sheng, Dong Won Choi, Seung Hwan Lee, Jozeph Park, Jin Seong Park

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

Indium oxide (InOx) films are grown by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]-indium (InCA-1) as the metal precursor and hydrogen peroxide (H2O2) as the oxidant. It is found that the electrical properties of the indium oxide layers strongly depend on the ALD growth temperature. Relatively low electrical resistivity (∼10-4 Ω cm) and high optical transparency (>85%) are obtained at growth temperatures higher than 200 °C, which make the indium oxide film suitable for transparent conducting oxide (TCO) applications. On the other hand, at relatively low growth temperatures below 150 °C, indium oxide behaves as a transparent semiconducting oxide (TSO). Thin film transistors (TFTs) incorporating this material as the active layer exhibit reasonably high performance with saturation mobility exceeding 10 cm2 V-1 s-1 and a threshold voltage near 0 V.

Original languageEnglish
Pages (from-to)7571-7576
Number of pages6
JournalJournal of Materials Chemistry C
Volume4
Issue number32
DOIs
StatePublished - 2016 Jan 1

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