Patterning of Ru electrode in O2/Cl2 gas using reactive ion etcher

Hyoun Woo Kim, Byong Sun Ju, Chang Jin Kang

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We have studied the reactive ion etching of Ru electrode using O2/Cl2 plasma. We have revealed that the Ru etch rate and thus the Ru to SiO2 etch selectivity increase by increasing pressure, total gas flow rate, temperature and decreasing the HRF power and LRF power. The vertical Ru etching profile is attained.

Original languageEnglish
Pages (from-to)481-486
Number of pages6
JournalUser Modeling and User-Adapted Interaction
Volume71
Issue number4
DOIs
StatePublished - 2003 Jul 25

Keywords

  • Etching
  • Etching profile
  • RIE
  • Ru

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