P2-13: Field emission characteristics of carbon nanotube forest on etched Si substrate

Jungwoo Lee, Taehee Park, Jongtaek Lee, Juwon Ahn, Mingyeong Shin, Whikun Yi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we investigatethe field emission characteristics of carbon nanotube forest on three types substrate: (1) mirror polished, (2) chemically etched (large pattern) and (3) chemically etched (small pattern) Si substrate. The surface morphology of CNTs forest was characterized by scanning electron microscopy (SEM), surface chemical state and electronic structure phase analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.

Original languageEnglish
Title of host publication23rd International Vacuum Nanoelectronics Conference, IVNC 2010
Pages147-148
Number of pages2
DOIs
StatePublished - 2010 Oct 29
Event23rd International Vacuum Nanoelectronics Conference, IVNC 2010 - Palo Alto, CA, United States
Duration: 2010 Jul 262010 Jul 30

Publication series

Name23rd International Vacuum Nanoelectronics Conference, IVNC 2010

Other

Other23rd International Vacuum Nanoelectronics Conference, IVNC 2010
CountryUnited States
CityPalo Alto, CA
Period10/07/2610/07/30

Fingerprint

Field emission
Carbon nanotubes
Substrates
Electronic structure
Surface morphology
Raman spectroscopy
Mirrors
X ray photoelectron spectroscopy
Scanning electron microscopy

Keywords

  • Carbon nanotube
  • Chemical etched Si substrate
  • Field emission

Cite this

Lee, J., Park, T., Lee, J., Ahn, J., Shin, M., & Yi, W. (2010). P2-13: Field emission characteristics of carbon nanotube forest on etched Si substrate. In 23rd International Vacuum Nanoelectronics Conference, IVNC 2010 (pp. 147-148). [5563155] (23rd International Vacuum Nanoelectronics Conference, IVNC 2010). https://doi.org/10.1109/IVNC.2010.5563155
Lee, Jungwoo ; Park, Taehee ; Lee, Jongtaek ; Ahn, Juwon ; Shin, Mingyeong ; Yi, Whikun. / P2-13 : Field emission characteristics of carbon nanotube forest on etched Si substrate. 23rd International Vacuum Nanoelectronics Conference, IVNC 2010. 2010. pp. 147-148 (23rd International Vacuum Nanoelectronics Conference, IVNC 2010).
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Lee, J, Park, T, Lee, J, Ahn, J, Shin, M & Yi, W 2010, P2-13: Field emission characteristics of carbon nanotube forest on etched Si substrate. in 23rd International Vacuum Nanoelectronics Conference, IVNC 2010., 5563155, 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, pp. 147-148, 23rd International Vacuum Nanoelectronics Conference, IVNC 2010, Palo Alto, CA, United States, 10/07/26. https://doi.org/10.1109/IVNC.2010.5563155

P2-13 : Field emission characteristics of carbon nanotube forest on etched Si substrate. / Lee, Jungwoo; Park, Taehee; Lee, Jongtaek; Ahn, Juwon; Shin, Mingyeong; Yi, Whikun.

23rd International Vacuum Nanoelectronics Conference, IVNC 2010. 2010. p. 147-148 5563155 (23rd International Vacuum Nanoelectronics Conference, IVNC 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee J, Park T, Lee J, Ahn J, Shin M, Yi W. P2-13: Field emission characteristics of carbon nanotube forest on etched Si substrate. In 23rd International Vacuum Nanoelectronics Conference, IVNC 2010. 2010. p. 147-148. 5563155. (23rd International Vacuum Nanoelectronics Conference, IVNC 2010). https://doi.org/10.1109/IVNC.2010.5563155